Part Details for IXFH120N25T by IXYS Corporation
Overview of IXFH120N25T by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFH120N25T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFH120N25T
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Mouser Electronics | MOSFETs Trench HiperFETs Power MOSFETs RoHS: Compliant | 0 |
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$10.4400 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$9.7700 | Buy Now |
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DISTI #
IXFH120N25T
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TTI | MOSFETs Trench HiperFETs Power MOSFETs Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$8.6300 | Buy Now |
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DISTI #
IXFH120N25T
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TME | Transistor: N-MOSFET, unipolar, 250V, 120A, 890W, TO247-3, 108ns Min Qty: 1 | 8 |
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$9.2500 / $11.4700 | Buy Now |
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New Advantage Corporation | MOSFET DIS.120A 250V N-CH TO247AD HIPERFET RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 24 |
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$19.7900 / $21.2000 | Buy Now |
Part Details for IXFH120N25T
IXFH120N25T CAD Models
IXFH120N25T Part Data Attributes
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IXFH120N25T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH120N25T
IXYS Corporation
Power Field-Effect Transistor, 120A I(D), 250V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | PLASTIC, TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 890 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH120N25T
This table gives cross-reference parts and alternative options found for IXFH120N25T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH120N25T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTH110N25T | IXYS Corporation | $6.1849 | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXFH120N25T vs IXTH110N25T |
| IXFX120N25 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 120A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXFH120N25T vs IXFX120N25 |
| IXFV110N25TS | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXFH120N25T vs IXFV110N25TS |
| IXTK120N25P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFH120N25T vs IXTK120N25P |
| IXTV110N25TS | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXFH120N25T vs IXTV110N25TS |
| IXFX1871 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXFH120N25T vs IXFX1871 |
| IXTK120N25P | IXYS Corporation | $12.6313 | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXFH120N25T vs IXTK120N25P |
| IXTD110N25T-8W | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | IXFH120N25T vs IXTD110N25T-8W |
| IXFX1871 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXFH120N25T vs IXFX1871 |
| IXFH110N25T | IXYS Corporation | $4.6664 | Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXFH120N25T vs IXFH110N25T |