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Part Details for IXFA36N60X3 by Littelfuse Inc
Overview of IXFA36N60X3 by Littelfuse Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFA36N60X3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
51AK0710
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Newark | Mosfet, N-Ch, 600V, 36A, To-263 Rohs Compliant: Yes |Littelfuse IXFA36N60X3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$3.5400 / $6.6600 | Buy Now |
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DISTI #
27AK2223
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Newark | Discrete Mosfet 36A 600V X3 To263/Tube Rohs Compliant: Yes |Littelfuse IXFA36N60X3 RoHS: Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.6200 / $3.9100 | Buy Now |
|
DISTI #
5656-IXFA36N60X3-ND
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DigiKey | MOSFET ULTRA JCT 600V 36A TO263 Min Qty: 50 Lead time: 32 Weeks Container: Tube | Temporarily Out of Stock |
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$3.6123 / $5.4256 | Buy Now |
|
|
Ozdisan Elektronik | MOSFET DIS.36A 600V N-CH TO263 (D2PAK) X3 SMT | 0 |
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$6.9805 / $7.6786 | RFQ |
Part Details for IXFA36N60X3
IXFA36N60X3 CAD Models
IXFA36N60X3 Part Data Attributes
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IXFA36N60X3
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFA36N60X3
Littelfuse Inc
Power Field-Effect Transistor, 36A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 750 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.6 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 446 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |