Part Details for IXDR30N120D1 by IXYS Corporation
Overview of IXDR30N120D1 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXDR30N120D1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXDR30N120D1-ND
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DigiKey | IGBT 1200V 50A 200W ISOPLUS247 Min Qty: 300 Lead time: 75 Weeks Container: Tube | Temporarily Out of Stock |
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$7.2656 | Buy Now |
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Sense Electronic Company Limited | TO-247-3 | 3156 |
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RFQ |
Part Details for IXDR30N120D1
IXDR30N120D1 CAD Models
IXDR30N120D1 Part Data Attributes
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IXDR30N120D1
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXDR30N120D1
IXYS Corporation
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, ISOPLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | ISOPLUS | |
| Package Description | ISOPLUS247, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | ISOPLUS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 570 ns | |
| Turn-on Time-Nom (ton) | 170 ns |
Alternate Parts for IXDR30N120D1
This table gives cross-reference parts and alternative options found for IXDR30N120D1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXDR30N120D1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXGH25N120 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDR30N120D1 vs IXGH25N120 |
| IXGH12N100AU1 | Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDR30N120D1 vs IXGH12N100AU1 |
| IXGH56N60B3 | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXDR30N120D1 vs IXGH56N60B3 |
| IXGH15N120C | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDR30N120D1 vs IXGH15N120C |
| IXGA4N100 | Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | IXYS Corporation | IXDR30N120D1 vs IXGA4N100 |
| IXGA15N100C | Insulated Gate Bipolar Transistor, 30A I(C), 1000V V(BR)CES, N-Channel, TO-263AA, D2PAK-3 | IXYS Corporation | IXDR30N120D1 vs IXGA15N100C |
| IXGH25N100U1 | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDR30N120D1 vs IXGH25N100U1 |
| CT30SM-12 | 30A, 600V, N-CHANNEL IGBT, TO-3P, 3 PIN | Renesas Electronics Corporation | IXDR30N120D1 vs CT30SM-12 |
| IXDH20N120D1 | Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDR30N120D1 vs IXDH20N120D1 |
| IXGH56N60A3 | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXDR30N120D1 vs IXGH56N60A3 |