Part Details for IXBX50N360HV by Littelfuse Inc
Overview of IXBX50N360HV by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXBX50N360HV
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0395
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Newark | Igbt, 3.6Kv, 125A, 150Deg C, 660W, Continuous Collector Current:125A, Collector Emitter Saturation Voltage:2.4V, Power Dissipation:660W, Collector Emitter Voltage Max:3.6Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBX50N360HV Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 18 |
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$60.6300 / $65.3000 | Buy Now |
Part Details for IXBX50N360HV
IXBX50N360HV CAD Models
IXBX50N360HV Part Data Attributes
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IXBX50N360HV
Littelfuse Inc
Buy Now
Datasheet
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IXBX50N360HV
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 125 A | |
| Collector-Emitter Voltage-Max | 3600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 660 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1880 ns | |
| Turn-on Time-Nom (ton) | 889 ns | |
| VCEsat-Max | 2.9 V |