-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IXBF50N360 by Littelfuse Inc
Overview of IXBF50N360 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXBF50N360
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
25AJ5377
|
Newark | Disc Igbt Bimsft-Veryhivolt I4-Pak Iso+/Tube |Littelfuse IXBF50N360 RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now |
Part Details for IXBF50N360
IXBF50N360 CAD Models
IXBF50N360 Part Data Attributes
|
|
IXBF50N360
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXBF50N360
Littelfuse Inc
Insulated Gate Bipolar Transistor,
|
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 70 A | |
| Collector-Emitter Voltage-Max | 3600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 290 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1880 ns | |
| Turn-on Time-Nom (ton) | 889 ns | |
| VCEsat-Max | 2.9 V |