Part Details for ISL9N327AD3ST by Fairchild Semiconductor Corporation
Overview of ISL9N327AD3ST by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for ISL9N327AD3ST
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 20A, 30V, N-Channel Power MOSFET, TO-252AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 5000 |
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$0.4604 / $0.5417 | Buy Now |
Part Details for ISL9N327AD3ST
ISL9N327AD3ST CAD Models
ISL9N327AD3ST Part Data Attributes
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ISL9N327AD3ST
Fairchild Semiconductor Corporation
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Datasheet
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ISL9N327AD3ST
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Total Weight | 310 | |
| Category CO2 Kg | 8.8 | |
| CO2 | 2728 | |
| EU RoHS Version | RoHS 2 (2015/863/EU) | |
| EU RoHS Exemptions | 7(a) | |
| Candidate List Date | 2024-01-23 | |
| SVHC Over MCV | 7439-92-1 | |
| CAS Accounted for Wt | 54 | |
| CA Prop 65 Presence | YES | |
| CA Prop 65 CAS Numbers | 7439-92-1, 1309-64-4 | |
| Conflict Mineral Status | DRC Conflict Free Undeterminable | |
| Conflict Mineral Status Source | Conflict Minerals Statement | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for ISL9N327AD3ST
This table gives cross-reference parts and alternative options found for ISL9N327AD3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9N327AD3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| ISL9N322AD3ST | Power Field-Effect Transistor, 20A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | ISL9N327AD3ST vs ISL9N322AD3ST |
| FDD6612A | 9.5A, 30V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | ISL9N327AD3ST vs FDD6612A |
| ISL9N327AD3ST | 20A, 30V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | ISL9N327AD3ST vs ISL9N327AD3ST |
| FDD6612A | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | ISL9N327AD3ST vs FDD6612A |