Part Details for ISL9N316AP3 by Fairchild Semiconductor Corporation
Overview of ISL9N316AP3 by Fairchild Semiconductor Corporation
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Applications
Energy and Power Systems
Renewable Energy
Part Details for ISL9N316AP3
ISL9N316AP3 CAD Models
ISL9N316AP3 Part Data Attributes
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ISL9N316AP3
Fairchild Semiconductor Corporation
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Datasheet
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ISL9N316AP3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 48A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 48 A | |
Drain-source On Resistance-Max | 0.023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |