Part Details for ISL9N302AP3 by Fairchild Semiconductor Corporation
Overview of ISL9N302AP3 by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for ISL9N302AP3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 75 |
|
RFQ | ||
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 179 |
|
$1.8720 / $4.3200 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 60 |
|
$1.5400 / $2.8000 | Buy Now |
|
|
Chip1Cloud | MOSFET N-CH 30V 75A TO-220AB | 9000 |
|
RFQ |
Part Details for ISL9N302AP3
ISL9N302AP3 CAD Models
ISL9N302AP3 Part Data Attributes
|
|
ISL9N302AP3
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
ISL9N302AP3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 345 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for ISL9N302AP3
This table gives cross-reference parts and alternative options found for ISL9N302AP3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9N302AP3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | ISL9N302AP3 vs SPP80N03S2L-05 |
| NDP7050L | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | ISL9N302AP3 vs NDP7050L |
| SSH60N08 | Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | ISL9N302AP3 vs SSH60N08 |
| FQP6N50 | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | ISL9N302AP3 vs FQP6N50 |
| STW13NK80Z | 12A, 800V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | ISL9N302AP3 vs STW13NK80Z |
| STB24NM65N | N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET | STMicroelectronics | ISL9N302AP3 vs STB24NM65N |
| NDB705BE | 70A, 50V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | ISL9N302AP3 vs NDB705BE |
| SSH70N10 | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | ISL9N302AP3 vs SSH70N10 |
| NDB706AL | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | ISL9N302AP3 vs NDB706AL |
| STB80NF55L-08T4 | 80A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | ISL9N302AP3 vs STB80NF55L-08T4 |