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Overview of ISL73127EHVF by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| ISL73127EHVF | Renesas Electronics Corporation | Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays |
CAD Models for ISL73127EHVF by Renesas Electronics Corporation
Part Data Attributes for ISL73127EHVF by Renesas Electronics Corporation
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
|
|
Part Package Code
|
CFP
|
|
Package Description
|
,
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|
Pin Count
|
16
|
|
Manufacturer Package Code
|
K16.A
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|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.75
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|
Samacsys Manufacturer
|
Renesas Electronics
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|
Additional Feature
|
LOW NOISE
|
|
Collector Current-Max (IC)
|
0.0113 A
|
|
Collector-Emitter Voltage-Max
|
8 V
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|
Configuration
|
SEPARATE, 5 ELEMENTS
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|
DC Current Gain-Min (hFE)
|
40
|
|
Highest Frequency Band
|
ULTRA HIGH FREQUENCY BAND
|
|
JESD-30 Code
|
R-CDFP-F16
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|
JESD-609 Code
|
e4
|
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Number of Elements
|
5
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Number of Terminals
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16
|
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Operating Temperature-Max
|
125 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
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CERAMIC, METAL-SEALED COFIRED
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|
Package Shape
|
RECTANGULAR
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|
Package Style
|
FLATPACK
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|
Peak Reflow Temperature (Cel)
|
260
|
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Polarity/Channel Type
|
NPN
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Power Dissipation Ambient-Max
|
1.25 W
|
|
Reference Standard
|
MIL-38535; RH - 100K Rad(Si)
|
|
Surface Mount
|
YES
|
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Terminal Finish
|
GOLD
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|
Terminal Form
|
FLAT
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Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
AMPLIFIER
|
|
Transistor Element Material
|
SILICON
|
|
Transition Frequency-Nom (fT)
|
8000 MHz
|
|
VCEsat-Max
|
0.5 V
|