Datasheets
IS61DDB22M36A-300M3L by: Integrated Silicon Solution Inc

DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

Part Details for IS61DDB22M36A-300M3L by Integrated Silicon Solution Inc

Results Overview of IS61DDB22M36A-300M3L by Integrated Silicon Solution Inc

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IS61DDB22M36A-300M3L Information

IS61DDB22M36A-300M3L by Integrated Silicon Solution Inc is an SRAM.
SRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for IS61DDB22M36A-300M3L

Part # Distributor Description Stock Price Buy
DISTI # IS61DDB22M36A-300M3L
Avnet Americas SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin LFBGA - Bulk (Alt: IS61DDB22M36A-300M3L) RoHS: Compliant Min Qty: 105 Package Multiple: 105 Lead time: 28 Weeks, 0 Days Container: Bulk 0
RFQ
DISTI # IS61DDB22M36A-300M3L
Avnet Americas SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin LFBGA - Bulk (Alt: IS61DDB22M36A-300M3L) RoHS: Compliant Min Qty: 105 Package Multiple: 105 Lead time: 28 Weeks, 0 Days Container: Bulk 0
RFQ
DISTI # 870-61B22M36A300M3L
Mouser Electronics SRAM 72Mb 300Mhz 2Mx36 DDR-II Sync SRAM RoHS: Compliant 0
  • 105 $78.0000
$78.0000 Order Now

Part Details for IS61DDB22M36A-300M3L

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IS61DDB22M36A-300M3L Part Data Attributes

IS61DDB22M36A-300M3L Integrated Silicon Solution Inc
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IS61DDB22M36A-300M3L Integrated Silicon Solution Inc DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code BGA
Package Description LBGA,
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Factory Lead Time 28 Weeks
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B165
Length 17 mm
Memory Density 75497472 bit
Memory IC Type DDR SRAM
Memory Width 36
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX36
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.4 mm
Supply Voltage-Max (Vsup) 1.89 V
Supply Voltage-Min (Vsup) 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15 mm

Alternate Parts for IS61DDB22M36A-300M3L

This table gives cross-reference parts and alternative options found for IS61DDB22M36A-300M3L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61DDB22M36A-300M3L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IS61DDB22M36A-300M3I Integrated Silicon Solution Inc Check for Price DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 IS61DDB22M36A-300M3L vs IS61DDB22M36A-300M3I
Part Number Manufacturer Composite Price Description Compare
IS61DDB22M36C-250B4L Integrated Silicon Solution Inc Check for Price DDR SRAM, IS61DDB22M36A-300M3L vs IS61DDB22M36C-250B4L
IS61DDP2B22M36A1-300M3L Integrated Silicon Solution Inc Check for Price DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, LFBGA-165 IS61DDB22M36A-300M3L vs IS61DDP2B22M36A1-300M3L
IS61DDB22M36-250M3 Integrated Silicon Solution Inc Check for Price DDR SRAM, 2MX36, 0.35ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 IS61DDB22M36A-300M3L vs IS61DDB22M36-250M3
CY7C1524KV18-300BZXI Cypress Semiconductor Check for Price DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 IS61DDB22M36A-300M3L vs CY7C1524KV18-300BZXI
IS61DDB42M36A-300B4I Integrated Silicon Solution Inc Check for Price DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 IS61DDB22M36A-300M3L vs IS61DDB42M36A-300B4I
GS8662T36E-300I GSI Technology Check for Price DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1MM PITCH, FPBGA-165 IS61DDB22M36A-300M3L vs GS8662T36E-300I
R1Q6A7236ABB-30IB0 Renesas Electronics Corporation Check for Price DDR SRAM IS61DDB22M36A-300M3L vs R1Q6A7236ABB-30IB0
IS61DDPB22M36A2-300B4L Integrated Silicon Solution Inc Check for Price DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 IS61DDB22M36A-300M3L vs IS61DDPB22M36A2-300B4L
IS61DDP2B42M36A-300B4L Integrated Silicon Solution Inc Check for Price DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 IS61DDB22M36A-300M3L vs IS61DDP2B42M36A-300B4L
IS61DDP2B42M36A2-300B4L Integrated Silicon Solution Inc Check for Price DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 IS61DDB22M36A-300M3L vs IS61DDP2B42M36A2-300B4L

IS61DDB22M36A-300M3L Related Parts

IS61DDB22M36A-300M3L Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IS61DDB22M36A-300M3L is 0°C to 95°C.

  • To ensure signal integrity and reduce noise, it is recommended to follow proper PCB design guidelines, use differential signaling, and add decoupling capacitors near the DDR3 SDRAM.

  • The recommended refresh rate for the IS61DDB22M36A-300M3L is 8192 refreshes per second, with a refresh interval of 7.8us.

  • No, the IS61DDB22M36A-300M3L is designed to operate at a voltage supply of 1.5V ± 0.075V, and using a different voltage supply may damage the device or affect its performance.

  • Error handling and retries should be implemented in the memory controller or system design to handle errors such as data corruption, parity errors, or CRC errors.