Part Details for IS61DDB21M18A-300B4L by Integrated Silicon Solution Inc
Overview of IS61DDB21M18A-300B4L by Integrated Silicon Solution Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IS61DDB21M18A-300B4L
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IS61DDB21M18A-300B
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Avnet Americas | SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA - Bulk (Alt: IS61DDB21M18A-300B) RoHS: Not Compliant Min Qty: 144 Package Multiple: 144 Lead time: 28 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
DISTI #
870-61DD21M18A300B4L
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Mouser Electronics | SRAM 18Mb, DDR II (Burst of 2) CIO, Sync SRAM, 1M x 18, 165 Ball FBGA (13x15 mm), RoHS RoHS: Compliant | 0 |
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$29.7200 | Order Now |
Part Details for IS61DDB21M18A-300B4L
IS61DDB21M18A-300B4L CAD Models
IS61DDB21M18A-300B4L Part Data Attributes
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IS61DDB21M18A-300B4L
Integrated Silicon Solution Inc
Buy Now
Datasheet
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Compare Parts:
IS61DDB21M18A-300B4L
Integrated Silicon Solution Inc
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Part Package Code | BGA | |
Package Description | LBGA, | |
Pin Count | 165 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Factory Lead Time | 28 Weeks | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
JESD-30 Code | R-PBGA-B165 | |
Length | 15 mm | |
Memory Density | 18874368 bit | |
Memory IC Type | DDR SRAM | |
Memory Width | 18 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX18 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Seated Height-Max | 1.4 mm | |
Supply Voltage-Max (Vsup) | 1.89 V | |
Supply Voltage-Min (Vsup) | 1.71 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 13 mm |
Alternate Parts for IS61DDB21M18A-300B4L
This table gives cross-reference parts and alternative options found for IS61DDB21M18A-300B4L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61DDB21M18A-300B4L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CY7C1386FV25-200BGI | Cache SRAM, 512KX36, 3ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 | Cypress Semiconductor | IS61DDB21M18A-300B4L vs CY7C1386FV25-200BGI |
CY7C1372A-133BGC | ZBT SRAM, 1MX18, 4.2ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119 | Cypress Semiconductor | IS61DDB21M18A-300B4L vs CY7C1372A-133BGC |
CY7C1306V25-100BZC | QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 | Cypress Semiconductor | IS61DDB21M18A-300B4L vs CY7C1306V25-100BZC |
IS61LPD51236-250B2I | Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 | Integrated Silicon Solution Inc | IS61DDB21M18A-300B4L vs IS61LPD51236-250B2I |
IS61SF12832-8B | Cache SRAM, 128KX32, 8ns, CMOS, PBGA119, PLASTIC, BGA-119 | Integrated Silicon Solution Inc | IS61DDB21M18A-300B4L vs IS61SF12832-8B |
HM6AQB18202BP40 | 2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 | Renesas Electronics Corporation | IS61DDB21M18A-300B4L vs HM6AQB18202BP40 |
71V3557SA85PFGI | Cache SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 | Integrated Device Technology Inc | IS61DDB21M18A-300B4L vs 71V3557SA85PFGI |
MT58LC128K32B4BG-6.8 | Standard SRAM, 128KX32, 6.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | Micron Technology Inc | IS61DDB21M18A-300B4L vs MT58LC128K32B4BG-6.8 |
UPD464318LS1-A65 | Cache SRAM, 256KX18, 3.5ns, BICMOS, PBGA119, PLASTIC, BGA-119 | NEC Electronics Group | IS61DDB21M18A-300B4L vs UPD464318LS1-A65 |
CY7C1321V18-250BZC | DDR SRAM, 512KX36, 0.35ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 | Cypress Semiconductor | IS61DDB21M18A-300B4L vs CY7C1321V18-250BZC |