Datasheets
IS61DDB21M18A-300B4L by: Integrated Silicon Solution Inc

DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

Part Details for IS61DDB21M18A-300B4L by Integrated Silicon Solution Inc

Overview of IS61DDB21M18A-300B4L by Integrated Silicon Solution Inc

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Price & Stock for IS61DDB21M18A-300B4L

Part # Distributor Description Stock Price Buy
DISTI # IS61DDB21M18A-300B
Avnet Americas SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA - Bulk (Alt: IS61DDB21M18A-300B) RoHS: Not Compliant Min Qty: 144 Package Multiple: 144 Lead time: 28 Weeks, 0 Days Container: Bulk 0
RFQ
DISTI # 870-61DD21M18A300B4L
Mouser Electronics SRAM 18Mb, DDR II (Burst of 2) CIO, Sync SRAM, 1M x 18, 165 Ball FBGA (13x15 mm), RoHS RoHS: Compliant 0
  • 144 $29.7200
$29.7200 Order Now

Part Details for IS61DDB21M18A-300B4L

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IS61DDB21M18A-300B4L Part Data Attributes

IS61DDB21M18A-300B4L Integrated Silicon Solution Inc
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IS61DDB21M18A-300B4L Integrated Silicon Solution Inc DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code BGA
Package Description LBGA,
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Factory Lead Time 28 Weeks
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B165
Length 15 mm
Memory Density 18874368 bit
Memory IC Type DDR SRAM
Memory Width 18
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX18
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.4 mm
Supply Voltage-Max (Vsup) 1.89 V
Supply Voltage-Min (Vsup) 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 13 mm

Alternate Parts for IS61DDB21M18A-300B4L

This table gives cross-reference parts and alternative options found for IS61DDB21M18A-300B4L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61DDB21M18A-300B4L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1386FV25-200BGI Cache SRAM, 512KX36, 3ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 Cypress Semiconductor IS61DDB21M18A-300B4L vs CY7C1386FV25-200BGI
CY7C1372A-133BGC ZBT SRAM, 1MX18, 4.2ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119 Cypress Semiconductor IS61DDB21M18A-300B4L vs CY7C1372A-133BGC
CY7C1306V25-100BZC QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 Cypress Semiconductor IS61DDB21M18A-300B4L vs CY7C1306V25-100BZC
IS61LPD51236-250B2I Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 Integrated Silicon Solution Inc IS61DDB21M18A-300B4L vs IS61LPD51236-250B2I
IS61SF12832-8B Cache SRAM, 128KX32, 8ns, CMOS, PBGA119, PLASTIC, BGA-119 Integrated Silicon Solution Inc IS61DDB21M18A-300B4L vs IS61SF12832-8B
HM6AQB18202BP40 2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 Renesas Electronics Corporation IS61DDB21M18A-300B4L vs HM6AQB18202BP40
71V3557SA85PFGI Cache SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 Integrated Device Technology Inc IS61DDB21M18A-300B4L vs 71V3557SA85PFGI
MT58LC128K32B4BG-6.8 Standard SRAM, 128KX32, 6.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 Micron Technology Inc IS61DDB21M18A-300B4L vs MT58LC128K32B4BG-6.8
UPD464318LS1-A65 Cache SRAM, 256KX18, 3.5ns, BICMOS, PBGA119, PLASTIC, BGA-119 NEC Electronics Group IS61DDB21M18A-300B4L vs UPD464318LS1-A65
CY7C1321V18-250BZC DDR SRAM, 512KX36, 0.35ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 Cypress Semiconductor IS61DDB21M18A-300B4L vs CY7C1321V18-250BZC

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