Datasheets
IS43LR32400F-6BL by: Integrated Silicon Solution Inc

DDR DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90

Part Details for IS43LR32400F-6BL by Integrated Silicon Solution Inc

Overview of IS43LR32400F-6BL by Integrated Silicon Solution Inc

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Part Details for IS43LR32400F-6BL

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IS43LR32400F-6BL Part Data Attributes

IS43LR32400F-6BL Integrated Silicon Solution Inc
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IS43LR32400F-6BL Integrated Silicon Solution Inc DDR DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code DSBGA
Package Description TFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8,16
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 134217728 bit
Memory IC Type DDR1 DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8,16
Standby Current-Max 0.00001 A
Supply Current-Max 0.095 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for IS43LR32400F-6BL

This table gives cross-reference parts and alternative options found for IS43LR32400F-6BL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43LR32400F-6BL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS43LR32400F-6BLI DDR DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS43LR32400F-6BL vs IS43LR32400F-6BLI
IS43LR32400E-6BL DDR DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS43LR32400F-6BL vs IS43LR32400E-6BL
IS46LR32400F-6BLA1 DDR DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS43LR32400F-6BL vs IS46LR32400F-6BLA1
IS43LR32400D-6BL DDR DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-90 Integrated Silicon Solution Inc IS43LR32400F-6BL vs IS43LR32400D-6BL
IS43LR32400D-6BLI DDR DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-90 Integrated Silicon Solution Inc IS43LR32400F-6BL vs IS43LR32400D-6BLI
Part Number Description Manufacturer Compare
K4M28323PH-FC1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS43LR32400F-6BL vs K4M28323PH-FC1L0
K4S28323LF-FC1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS43LR32400F-6BL vs K4S28323LF-FC1H0
K4M56323LE-ME1L Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS43LR32400F-6BL vs K4M56323LE-ME1L
HY57W2A3220ST-S Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc IS43LR32400F-6BL vs HY57W2A3220ST-S
W9825G2DB-75I Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-90 Winbond Electronics Corp IS43LR32400F-6BL vs W9825G2DB-75I
K4S56323LF-HL1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS43LR32400F-6BL vs K4S56323LF-HL1H0
K4S563233F-FC1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS43LR32400F-6BL vs K4S563233F-FC1H0
K4S283233F-FN1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS43LR32400F-6BL vs K4S283233F-FN1H0
K4M56323LE-ME800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor IS43LR32400F-6BL vs K4M56323LE-ME800
MT46H4M32LFB5-6:K DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc IS43LR32400F-6BL vs MT46H4M32LFB5-6:K

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