Part Details for IS42VM16100G-6TLI by Integrated Silicon Solution Inc
Overview of IS42VM16100G-6TLI by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IS42VM16100G-6TLI
IS42VM16100G-6TLI CAD Models
IS42VM16100G-6TLI Part Data Attributes
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IS42VM16100G-6TLI
Integrated Silicon Solution Inc
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Datasheet
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IS42VM16100G-6TLI
Integrated Silicon Solution Inc
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 5.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e3 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.00001 A | |
Supply Current-Max | 0.055 mA | |
Supply Voltage-Max (Vsup) | 1.95 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for IS42VM16100G-6TLI
This table gives cross-reference parts and alternative options found for IS42VM16100G-6TLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42VM16100G-6TLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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VG3617161ET-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | IS42VM16100G-6TLI vs VG3617161ET-8 |
IS42S16100B-6T | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Integrated Silicon Solution Inc | IS42VM16100G-6TLI vs IS42S16100B-6T |
K4S161622D-TI10 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 | Samsung Semiconductor | IS42VM16100G-6TLI vs K4S161622D-TI10 |
HY57V161610DLTC-10S | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | IS42VM16100G-6TLI vs HY57V161610DLTC-10S |
UPD4516161AG5-A80-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | IS42VM16100G-6TLI vs UPD4516161AG5-A80-9NF |
K4S161622E-TI55 | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 | Samsung Semiconductor | IS42VM16100G-6TLI vs K4S161622E-TI55 |
HY57V161610DTC-15 | Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | IS42VM16100G-6TLI vs HY57V161610DTC-15 |
UPD4516161AG5-A12-9NF | Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics Group | IS42VM16100G-6TLI vs UPD4516161AG5-A12-9NF |
IS42VS16100D-75T | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, PLASTIC, TSOP2-50 | Integrated Silicon Solution Inc | IS42VM16100G-6TLI vs IS42VS16100D-75T |
HYB39S16160AT-8 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, TSSOP2-50 | Siemens | IS42VM16100G-6TLI vs HYB39S16160AT-8 |