Datasheets
IS42S32400E-6BLI by: Integrated Silicon Solution Inc

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90

Part Details for IS42S32400E-6BLI by Integrated Silicon Solution Inc

Overview of IS42S32400E-6BLI by Integrated Silicon Solution Inc

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Part Details for IS42S32400E-6BLI

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IS42S32400E-6BLI Part Data Attributes

IS42S32400E-6BLI Integrated Silicon Solution Inc
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IS42S32400E-6BLI Integrated Silicon Solution Inc Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code BGA
Package Description TFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.18 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Width 8 mm

Alternate Parts for IS42S32400E-6BLI

This table gives cross-reference parts and alternative options found for IS42S32400E-6BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32400E-6BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS45S32400B-6BA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MINI, FBGA-90 Integrated Silicon Solution Inc IS42S32400E-6BLI vs IS45S32400B-6BA1
IS45S32400B-6BLA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90 Integrated Silicon Solution Inc IS42S32400E-6BLI vs IS45S32400B-6BLA1
IS42S32400-6BLI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90 Integrated Silicon Solution Inc IS42S32400E-6BLI vs IS42S32400-6BLI
IS42S32400D-6BLI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc IS42S32400E-6BLI vs IS42S32400D-6BLI
IS45S32400E-6BLA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc IS42S32400E-6BLI vs IS45S32400E-6BLA1
Part Number Description Manufacturer Compare
IS42S32400D-7BI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Integrated Silicon Solution Inc IS42S32400E-6BLI vs IS42S32400D-7BI
K4S283233E-SF600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor IS42S32400E-6BLI vs K4S283233E-SF600
K4M283233H-HN750 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32400E-6BLI vs K4M283233H-HN750
K4S283233E-HE600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32400E-6BLI vs K4S283233E-HE600
IS42RM32400F-75BLI Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 13 X 8 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42S32400E-6BLI vs IS42RM32400F-75BLI
HY5V22EMP-6 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc IS42S32400E-6BLI vs HY5V22EMP-6
K4S283233E-FF750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor IS42S32400E-6BLI vs K4S283233E-FF750
IS45S32400E-6BLA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc IS42S32400E-6BLI vs IS45S32400E-6BLA1
HY5V22F-8 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc IS42S32400E-6BLI vs HY5V22F-8
K4S283233F-EI1H Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32400E-6BLI vs K4S283233F-EI1H

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