Memory
IS42S32400B-6B
Integrated Silicon Solution Inc
Description: Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90

Overview of IS42S32400B-6B by Integrated Silicon Solution Inc

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Part Data Attributes for IS42S32400B-6B by Integrated Silicon Solution Inc

IS42S32400B-6B
Integrated Silicon Solution Inc
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
BGA
Package Description
FBGA-90
Pin Count
90
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Samacsys Manufacturer
Integrated Silicon Solution Inc.
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
166 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
JESD-609 Code
e0
Length
13 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
4MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
BGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.001 A
Supply Current-Max
0.18 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
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  1. IS42S32400B-6B
    Integrated Silicon Solution Inc
    Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
    VS

Alternate Parts for IS42S32400B-6B

This table gives cross-reference parts and alternative options found for IS42S32400B-6B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32400B-6B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IS42S32400D-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc IS42S32400B-6B vs IS42S32400D-6BL
IS42S32400B-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc IS42S32400B-6B vs IS42S32400B-6BL
EDS1232AABB-60L-E Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc IS42S32400B-6B vs EDS1232AABB-60L-E
EDS1232AABB-60-E Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc IS42S32400B-6B vs EDS1232AABB-60-E
IS42S32400E-6B Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, FBGA-90 Integrated Silicon Solution Inc IS42S32400B-6B vs IS42S32400E-6B
EDS1232AABB-60L Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc IS42S32400B-6B vs EDS1232AABB-60L
IS42S32400D-6B Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Integrated Silicon Solution Inc IS42S32400B-6B vs IS42S32400D-6B
IS42S32400-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90 Integrated Silicon Solution Inc IS42S32400B-6B vs IS42S32400-6BL
IS42S32400E-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc IS42S32400B-6B vs IS42S32400E-6BL
Part Number Description Manufacturer Compare
K4S283233F-MI1H Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32400B-6B vs K4S283233F-MI1H
K4M283233H-FL600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32400B-6B vs K4M283233H-FL600
HY5V22F-P Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc IS42S32400B-6B vs HY5V22F-P
K4S283233F-HL750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32400B-6B vs K4S283233F-HL750
MT48LC4M32B2F5-6ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42S32400B-6B vs MT48LC4M32B2F5-6ES:G
K4S283233F-FF750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32400B-6B vs K4S283233F-FF750
MT48LC4M32B2B5-6AAAT:L Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS42S32400B-6B vs MT48LC4M32B2B5-6AAAT:L
K4S283233F-MI75 Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32400B-6B vs K4S283233F-MI75
MT48LC4M32B2B5-6:GAT IC 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90, Dynamic RAM Micron Technology Inc IS42S32400B-6B vs MT48LC4M32B2B5-6:GAT
K4S283233F-FC600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32400B-6B vs K4S283233F-FC600

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