Datasheets
IS42S32200E-7BLI by:

Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

Part Details for IS42S32200E-7BLI by Integrated Silicon Solution Inc

Overview of IS42S32200E-7BLI by Integrated Silicon Solution Inc

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Part Details for IS42S32200E-7BLI

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IS42S32200E-7BLI Part Data Attributes:

IS42S32200E-7BLI Integrated Silicon Solution Inc
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IS42S32200E-7BLI Integrated Silicon Solution Inc Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code DSBGA
Package Description TFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 142 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 2MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Width 8 mm

Alternate Parts for IS42S32200E-7BLI

This table gives cross-reference parts and alternative options found for IS42S32200E-7BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32200E-7BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS45S32200E-7BLA1 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42S32200E-7BLI vs IS45S32200E-7BLA1
IS45S32200E-7BA1 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42S32200E-7BLI vs IS45S32200E-7BA1
Part Number Description Manufacturer Compare
K4S64323LF-SU75 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32200E-7BLI vs K4S64323LF-SU75
K4S64323LH-FN750 Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32200E-7BLI vs K4S64323LH-FN750
K4S643233H-HL1L0 Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32200E-7BLI vs K4S643233H-HL1L0
MT48LC2M32B2B5-7IT:G Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Micron Technology Inc IS42S32200E-7BLI vs MT48LC2M32B2B5-7IT:G
K4S643233E-SE10 Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32200E-7BLI vs K4S643233E-SE10
K4S64323LH-HC750 Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32200E-7BLI vs K4S64323LH-HC750
K4S64323LH-FE750 Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32200E-7BLI vs K4S64323LH-FE750
IS45S32200E-7BLA1 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42S32200E-7BLI vs IS45S32200E-7BLA1
IS45S32200L-7BLA1 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42S32200E-7BLI vs IS45S32200L-7BLA1
K4S64323LF-DP15 Synchronous DRAM, 2MX32, 9ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32200E-7BLI vs K4S64323LF-DP15

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