Datasheets
IS42S32160C-75BLI by:
Integrated Silicon Solution Inc
EBV Chips
Integrated Silicon Solution Inc
Not Found

Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207, WBGA-90

Part Details for IS42S32160C-75BLI by Integrated Silicon Solution Inc

Results Overview of IS42S32160C-75BLI by Integrated Silicon Solution Inc

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IS42S32160C-75BLI Information

IS42S32160C-75BLI by Integrated Silicon Solution Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for IS42S32160C-75BLI

Part # Distributor Description Stock Price Buy
DISTI # IS42S32160C-75BLI
Avnet Silica DRAM Chip SDRAM 512MBit 16Mx32 33V 90Pin WBGA (Alt: IS42S32160C-75BLI) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Silica - 0
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DISTI # IS42S32160C-75BLI
EBV Elektronik DRAM Chip SDRAM 512MBit 16Mx32 33V 90Pin WBGA (Alt: IS42S32160C-75BLI) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for IS42S32160C-75BLI

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IS42S32160C-75BLI Part Data Attributes

IS42S32160C-75BLI Integrated Silicon Solution Inc
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IS42S32160C-75BLI Integrated Silicon Solution Inc Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207, WBGA-90
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code DSBGA
Package Description LFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 16MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.4 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.004 A
Supply Current-Max 0.26 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8 mm

Alternate Parts for IS42S32160C-75BLI

This table gives cross-reference parts and alternative options found for IS42S32160C-75BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32160C-75BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IS42S32160C-75BL Integrated Silicon Solution Inc Check for Price Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MS-207, WBGA-90 IS42S32160C-75BLI vs IS42S32160C-75BL
IS42SM32160C-75EBL Integrated Silicon Solution Inc Check for Price Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 IS42S32160C-75BLI vs IS42SM32160C-75EBL
Part Number Manufacturer Composite Price Description Compare
MT46H16M32LGCX-75L:B Micron Technology Inc Check for Price DDR DRAM, 16MX32, 7.5ns, CMOS, PBGA90, 9 X 13 MM, GREEN, PLASTIC, VFBGA-90 IS42S32160C-75BLI vs MT46H16M32LGCX-75L:B
IS42S32160B-7BLI Integrated Silicon Solution Inc Check for Price Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, LEAD FREE, WBGA-90 IS42S32160C-75BLI vs IS42S32160B-7BLI
HY5V72DLM-H SK Hynix Inc Check for Price Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 IS42S32160C-75BLI vs HY5V72DLM-H
HYB18L512320BF-7.5 Qimonda AG Check for Price Synchronous DRAM, 16MX32, 6.5ns, CMOS, PBGA90, 13 X 8 MM, 1.20 MM HEIGHT, GREEN, PLASTIC, TFBGA-90 IS42S32160C-75BLI vs HYB18L512320BF-7.5
W989D2CBJX7G Winbond Electronics Corp Check for Price DDR DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN AND LEAD FREE, VFBGA-90 IS42S32160C-75BLI vs W989D2CBJX7G
K4S51323PF-EF1L0 Samsung Semiconductor Check for Price Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 IS42S32160C-75BLI vs K4S51323PF-EF1L0
IS42SM32160C-6BLI Integrated Silicon Solution Inc Check for Price Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 IS42S32160C-75BLI vs IS42SM32160C-6BLI
K4M51323PC-DC750 Samsung Semiconductor Check for Price Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 IS42S32160C-75BLI vs K4M51323PC-DC750
MT46H16M32LFCM-10IT Micron Technology Inc Check for Price DDR DRAM, 16MX32, 7ns, CMOS, PBGA90, 10 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 IS42S32160C-75BLI vs MT46H16M32LFCM-10IT
MT46H16M32LGB5-54AT:C Micron Technology Inc Check for Price DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 IS42S32160C-75BLI vs MT46H16M32LGB5-54AT:C

IS42S32160C-75BLI Related Parts

IS42S32160C-75BLI Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IS42S32160C-75BLI is 0°C to 85°C.

  • To ensure signal integrity on the memory bus, use a signal integrity analysis tool to simulate the signal transmission and optimize the PCB layout, and consider using a signal integrity model for the DDR3 SDRAM.

  • The recommended power-up sequence is to apply VDD and VDDQ simultaneously, followed by a 200us delay, and then apply the clock signal.

  • The IS42S32160C-75BLI requires a refresh command every 64ms, and the refresh interval can be adjusted based on the system's power management requirements.

  • The IS42S32160C-75BLI supports a maximum clock frequency of 1066MHz.