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Memory DRAMs IS42S16100E-6BL

Memory
IS42S16100E-6BL
Integrated Silicon Solution Inc
Description: Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60

Overview of IS42S16100E-6BL by Integrated Silicon Solution Inc

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for IS42S16100E-6BL by Integrated Silicon Solution Inc
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Part Data Attributes for IS42S16100E-6BL by Integrated Silicon Solution Inc
Parametric Data

IS42S16100E-6BL
Integrated Silicon Solution Inc
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
BGA
Package Description
TFBGA, BGA60,7X15,25
Pin Count
60
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
5.5 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
166 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B60
JESD-609 Code
e1
Length
10.1 mm
Memory Density
16777216 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
60
Number of Words
1048576 words
Number of Words Code
1000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
1MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA60,7X15,25
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Refresh Cycles
2048
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.16 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
BALL
Terminal Pitch
0.65 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
10
Width
6.4 mm
Want to compare parts?
  1. IS42S16100E-6BL
    Integrated Silicon Solution Inc
    Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60
    VS

Alternate Parts for IS42S16100E-6BL

This table gives cross-reference parts and alternative options found for IS42S16100E-6BL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S16100E-6BL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HY5V16FF6-P Synchronous DRAM, 1MX16, 5.4ns, CMOS, PBGA60, 10.10 X 6.40 MM, FBGA-60 SK Hynix Inc IS42S16100E-6BL vs HY5V16FF6-P
IS42S16100-7BLI Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 MM X 6.40 MM, 0.65 MM PITCH, LEAD FREE, FBGA-60 Integrated Silicon Solution Inc IS42S16100E-6BL vs IS42S16100-7BLI
IS42S16100F-7BL Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60 Integrated Silicon Solution Inc IS42S16100E-6BL vs IS42S16100F-7BL
IS42VS16100F-10BL Synchronous DRAM, 1MX16, 7ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60 Integrated Silicon Solution Inc IS42S16100E-6BL vs IS42VS16100F-10BL
HY5V16EF6-S Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10 X 6.40 MM, FBGA-60 SK Hynix Inc IS42S16100E-6BL vs HY5V16EF6-S
IS45S16100F-7BLA1 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60 Integrated Silicon Solution Inc IS42S16100E-6BL vs IS45S16100F-7BLA1
IS42S16100C1-7BLI Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.1 X 6.4 MM, 0.65 MM PITCH, LEAD FREE, FBGA-60 Integrated Silicon Solution Inc IS42S16100E-6BL vs IS42S16100C1-7BLI
IS42VS16100F-10BLI Synchronous DRAM, 1MX16, 7ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60 Integrated Silicon Solution Inc IS42S16100E-6BL vs IS42VS16100F-10BLI
IS42S16100F-6BLI Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60 Integrated Silicon Solution Inc IS42S16100E-6BL vs IS42S16100F-6BLI
IS42VS16100E-75BLI Synchronous DRAM, 1MX16, 6ns, CMOS, PBGA60, 6.40 X 10.10 MM, 1 MM HEIGHT, 0.65 MM PITCH, LEAD FREE, VFBGA-60 Integrated Silicon Solution Inc IS42S16100E-6BL vs IS42VS16100E-75BLI

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