Part Details for IS42RM32400G-75BLI by Integrated Silicon Solution Inc
Overview of IS42RM32400G-75BLI by Integrated Silicon Solution Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Price & Stock for IS42RM32400G-75BLI
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IS42RM32400G-75BLI-ND
|
DigiKey | IC DRAM 128MBIT PAR 90TFBGA Lead time: 10 Weeks Container: Tray | Limited Supply - Call |
|
Buy Now |
Part Details for IS42RM32400G-75BLI
IS42RM32400G-75BLI CAD Models
IS42RM32400G-75BLI Part Data Attributes
|
|
IS42RM32400G-75BLI
Integrated Silicon Solution Inc
Buy Now
Datasheet
|
Compare Parts:
IS42RM32400G-75BLI
Integrated Silicon Solution Inc
Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | DSBGA | |
| Package Description | TFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH, ALSO OPERATES AT 2.5V, 1.8V SUPPLY | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.00001 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for IS42RM32400G-75BLI
This table gives cross-reference parts and alternative options found for IS42RM32400G-75BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42RM32400G-75BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT48LC4M32B2B5-7IT:G | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | Micron Technology Inc | IS42RM32400G-75BLI vs MT48LC4M32B2B5-7IT:G |
| K4M283233H-HN600 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | IS42RM32400G-75BLI vs K4M283233H-HN600 |
| MT48LC4M32B2F5-7:GIT | IC 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90, Dynamic RAM | Micron Technology Inc | IS42RM32400G-75BLI vs MT48LC4M32B2F5-7:GIT |
| K4S283233E-SC750 | Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 | Samsung Semiconductor | IS42RM32400G-75BLI vs K4S283233E-SC750 |
| MT48LC4M32B2B5-6IT:G | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | Micron Technology Inc | IS42RM32400G-75BLI vs MT48LC4M32B2B5-6IT:G |
| IS42S32400AL-7BL | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Integrated Silicon Solution Inc | IS42RM32400G-75BLI vs IS42S32400AL-7BL |
| IS42SM32400F-6BLE | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Integrated Silicon Solution Inc | IS42RM32400G-75BLI vs IS42SM32400F-6BLE |
| K4S283233E-DF750 | Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | Samsung Semiconductor | IS42RM32400G-75BLI vs K4S283233E-DF750 |
| W9812G21H-6 | Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, 0.400 INCH, ROHS COMPLIANT, TSOP2-86 | Winbond Electronics Corp | IS42RM32400G-75BLI vs W9812G21H-6 |
| K4S283233E-HG600 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 | Samsung Semiconductor | IS42RM32400G-75BLI vs K4S283233E-HG600 |