Part Details for IS41LV82002-50J by Integrated Silicon Solution Inc
Results Overview of IS41LV82002-50J by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IS41LV82002-50J Information
IS41LV82002-50J by Integrated Silicon Solution Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for IS41LV82002-50J
IS41LV82002-50J CAD Models
IS41LV82002-50J Part Data Attributes
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IS41LV82002-50J
Integrated Silicon Solution Inc
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Datasheet
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IS41LV82002-50J
Integrated Silicon Solution Inc
EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Part Package Code | SOJ | |
Package Description | 0.300 INCH, SOJ-28 | |
Pin Count | 28 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE WITH EDO | |
Access Time-Max | 50 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-J28 | |
JESD-609 Code | e0 | |
Length | 18.161 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | EDO DRAM | |
Memory Width | 8 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 28 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 2MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOJ | |
Package Equivalence Code | SOJ28,.34 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 2048 | |
Seated Height-Max | 3.556 mm | |
Self Refresh | NO | |
Standby Current-Max | 0.0005 A | |
Supply Current-Max | 0.12 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | J BEND | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Width | 7.62 mm |
Alternate Parts for IS41LV82002-50J
This table gives cross-reference parts and alternative options found for IS41LV82002-50J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS41LV82002-50J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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KM48V2004CK-5 | Samsung Semiconductor | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | IS41LV82002-50J vs KM48V2004CK-5 |
K4E170812C-BC500 | Samsung Semiconductor | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | IS41LV82002-50J vs K4E170812C-BC500 |
K4E170812D-BC50 | Samsung Semiconductor | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | IS41LV82002-50J vs K4E170812D-BC50 |
K4E170812C-BL500 | Samsung Semiconductor | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | IS41LV82002-50J vs K4E170812C-BL500 |
K4E160812D-BC500 | Samsung Semiconductor | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | IS41LV82002-50J vs K4E160812D-BC500 |
MT4LC2M8E7DJ-5TR | Micron Technology Inc | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | IS41LV82002-50J vs MT4LC2M8E7DJ-5TR |
K4E170812D-BC500 | Samsung Semiconductor | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | IS41LV82002-50J vs K4E170812D-BC500 |
K4E170812C-BC50 | Samsung Semiconductor | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | IS41LV82002-50J vs K4E170812C-BC50 |
K4E170812D-BL500 | Samsung Semiconductor | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | IS41LV82002-50J vs K4E170812D-BL500 |
MT4LC2M8E7DJ-5STR | Micron Technology Inc | Check for Price | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | IS41LV82002-50J vs MT4LC2M8E7DJ-5STR |