Part Details for IRLZ34NSTRLPBF by International Rectifier
Overview of IRLZ34NSTRLPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLZ34NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 9933 |
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RFQ | ||
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Rochester Electronics | IRLZ34NS - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 449 |
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$0.5103 / $0.6004 | Buy Now |
Part Details for IRLZ34NSTRLPBF
IRLZ34NSTRLPBF CAD Models
IRLZ34NSTRLPBF Part Data Attributes:
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IRLZ34NSTRLPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLZ34NSTRLPBF
International Rectifier
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLZ34NSTRLPBF
This table gives cross-reference parts and alternative options found for IRLZ34NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ34NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLZ34NSTRLPBF | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRLZ34NSTRLPBF vs IRLZ34NSTRLPBF |
| IRLZ34NSPBF | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRLZ34NSTRLPBF vs IRLZ34NSPBF |
| IRLZ34NSTRRPBF | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRLZ34NSTRLPBF vs IRLZ34NSTRRPBF |
| IRLZ34NS | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRLZ34NSTRLPBF vs IRLZ34NS |
| IRLZ34NSTRR | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRLZ34NSTRLPBF vs IRLZ34NSTRR |
| IRLZ34NS | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IRLZ34NSTRLPBF vs IRLZ34NS |
| IRLZ34NSTRL | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRLZ34NSTRLPBF vs IRLZ34NSTRL |