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Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
64AH3720
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Newark | Mosfet, N-Ch, 55V, 30A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:30A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Product Range:-Rohs Compliant: Yes |Infineon IRLZ34NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 32670 |
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$0.6380 / $0.9980 | Buy Now |
DISTI #
38AH8510
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Newark | Planar 40 Min Qty: 1600 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4640 / $0.5670 | Buy Now |
DISTI #
IRLZ34NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 55V 30A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
29572 In Stock |
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$0.5146 / $0.9600 | Buy Now |
DISTI #
IRLZ34NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRLZ34NSTRLPBF) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 2400 |
|
$0.4632 / $0.5661 | Buy Now |
DISTI #
64AH3720
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Avnet Americas | Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 64AH3720) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 16956 Partner Stock |
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$0.7420 / $1.0200 | Buy Now |
DISTI #
942-IRLZ34NSTRLPBF
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Mouser Electronics | MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl RoHS: Compliant | 2842 |
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$0.5140 / $0.9600 | Buy Now |
DISTI #
E02:0323_00175505
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Arrow Electronics | Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Date Code: 2320 | Europe - 41600 |
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$0.3487 / $0.3523 | Buy Now |
DISTI #
V72:2272_13891279
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Arrow Electronics | Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2136 Container: Cut Strips | Americas - 732 |
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$0.5121 / $0.9452 | Buy Now |
DISTI #
70019902
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RS | IRLZ34NSTRLPBF N-channel MOSFET Transistor, 30 A, 55 V, 3+Tab-Pin D2PAK | Infineon IRLZ34NSTRLPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$1.1400 / $1.4400 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Container: Reel | 9600Reel |
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$0.4000 / $0.4400 | Buy Now |
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IRLZ34NSTRLPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRLZ34NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 110 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.046 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLZ34NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ34NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLZ34NSTRLPBF | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRLZ34NSTRLPBF vs IRLZ34NSTRLPBF |
IRLZ34NS | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IRLZ34NSTRLPBF vs IRLZ34NS |
IRLZ34NSTRR | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRLZ34NSTRLPBF vs IRLZ34NSTRR |