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Transistors Power Field-Effect Transistors IRLZ24NSPBF

Transistors
IRLZ24NSPBF
Description: Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3

Overview of IRLZ24NSPBF by International Rectifier

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Price & Stock for IRLZ24NSPBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Rochester Electronics IRLZ24NS - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 150
  • 1 $0.4521
  • 25 $0.4431
  • 100 $0.4250
  • 500 $0.4069
  • 1,000 $0.3843
$0.3843 / $0.4521 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Stock EU - 375
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

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Part Data Attributes for IRLZ24NSPBF by International Rectifier
Parametric Data

IRLZ24NSPBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
D2PAK
Package Description
LEAD FREE, PLASTIC PACKAGE-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
68 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
18 A
Drain-source On Resistance-Max
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
45 W
Power Dissipation-Max (Abs)
45 W
Pulsed Drain Current-Max (IDM)
72 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRLZ24NSPBF
    International Rectifier
    Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3
    VS

Alternate Parts for IRLZ24NSPBF

This table gives cross-reference parts and alternative options found for IRLZ24NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ24NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRLZ24NSTRLPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSPBF vs IRLZ24NSTRLPBF
IRLZ24NSTRRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSPBF vs IRLZ24NSTRRPBF
IRLZ24NSTRRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSPBF vs IRLZ24NSTRRPBF
IRLZ24NSPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSPBF vs IRLZ24NSPBF
IRLZ24NSTRLPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSPBF vs IRLZ24NSTRLPBF
Part Number Description Manufacturer Compare
IRLZ24NSTRLPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSPBF vs IRLZ24NSTRLPBF
IRLZ24NSPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSPBF vs IRLZ24NSPBF
IRLZ24NSTRRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSPBF vs IRLZ24NSTRRPBF
IRLZ24NSTRRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRLZ24NSPBF vs IRLZ24NSTRRPBF
IRLZ24NSTRLPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRLZ24NSPBF vs IRLZ24NSTRLPBF

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