Datasheets
IRLTS2242TRPBF by:

Power Field-Effect Transistor, 6.9A I(D), 20V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

Part Details for IRLTS2242TRPBF by International Rectifier

Overview of IRLTS2242TRPBF by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRLTS2242TRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 9 170
  • 9 $0.6000
  • 26 $0.3000
  • 168 $0.1800
$0.1800 / $0.6000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 6.9A I(D), 20V, 0.032OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 136
  • 1 $0.8000
  • 7 $0.4000
  • 26 $0.2400
$0.2400 / $0.8000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 6.9A I(D), 20V, 0.032OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 2736
  • 1 $0.9080
  • 123 $0.2724
  • 1,469 $0.1816
$0.1816 / $0.9080 Buy Now

Part Details for IRLTS2242TRPBF

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IRLTS2242TRPBF Part Data Attributes

IRLTS2242TRPBF International Rectifier
Buy Now Datasheet
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IRLTS2242TRPBF International Rectifier Power Field-Effect Transistor, 6.9A I(D), 20V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6.9 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 55 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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