Datasheets
IRLS4030TRLPBF by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for IRLS4030TRLPBF by Infineon Technologies AG

Overview of IRLS4030TRLPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRLS4030TRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 43AC3299
Newark Mosfet, N-Ch, 100V, 180A, To-263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:180A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0034Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Infineon IRLS4030TRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1025
  • 1 $4.7000
  • 10 $4.0000
  • 25 $3.7700
  • 50 $3.5400
  • 100 $3.3100
$3.3100 / $4.7000 Buy Now
DISTI # IRLS4030TRLPBFCT-ND
DigiKey MOSFET N-CH 100V 180A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1130
In Stock
  • 1 $4.6600
  • 10 $3.0860
  • 100 $2.1934
  • 800 $1.7339
$1.7339 / $4.6600 Buy Now
DISTI # IRLS4030TRLPBF
Avnet Americas Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRLS4030TRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 800
  • 800 $1.4507
  • 1,600 $1.4270
  • 3,200 $1.4096
  • 4,800 $1.3926
  • 6,400 $1.3761
$1.3761 / $1.4507 Buy Now
DISTI # 942-IRLS4030TRLPBF
Mouser Electronics MOSFETs MOSFT 100V 180A 4.3mOhm 87nC RoHS: Compliant 1251
  • 1 $3.9200
  • 10 $2.7200
  • 100 $2.0000
  • 500 $1.8600
  • 800 $1.7300
$1.7300 / $3.9200 Buy Now
DISTI # 70019182
RS MOSFET, 100V, 180A, 4.3 mOhm, 87 nC Qg, D2-PAK | Infineon IRLS4030TRLPBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $4.2200
  • 10 $4.0100
  • 20 $3.8000
  • 40 $3.5900
$3.5900 / $4.2200 RFQ
Future Electronics Single N-Channel 100 V 3.9 mOhm 93 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel 3200
Reel
  • 800 $1.7600
  • 1,600 $1.7300
  • 2,400 $1.7000
$1.7000 / $1.7600 Buy Now
Future Electronics Single N-Channel 100 V 3.9 mOhm 93 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel 0
Reel
  • 800 $1.7600
  • 1,600 $1.7300
  • 2,400 $1.7000
$1.7000 / $1.7600 Buy Now
DISTI # 77264641
Verical Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2332 Americas - 1052
  • 7 $4.5000
  • 11 $3.1125
  • 50 $2.4750
  • 100 $2.4000
  • 500 $2.3875
$2.3875 / $4.5000 Buy Now
DISTI # IRLS4030TRLPBF
TME Transistor: N-MOSFET, unipolar, 100V, 180A, 370W, D2PAK Min Qty: 800 0
  • 800 $2.4200
$2.4200 RFQ
DISTI # C1S322000505124
Chip1Stop Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant Container: Cut Tape 1052
  • 1 $3.5100
  • 10 $2.8600
  • 50 $2.2700
  • 100 $2.0500
  • 200 $1.9900
  • 500 $1.9800
$1.9800 / $3.5100 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 260
  • 1 $11.5400
  • 100 $8.6500
  • 1,000 $7.5000
$7.5000 / $11.5400 Buy Now
DISTI # SP001552944
EBV Elektronik Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001552944) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 180A 4.3m110A10V 370W 2.5V250uA 1 N-Channel D2PAK MOSFETs ROHS 1
  • 1 $6.0118
$6.0118 Buy Now
Win Source Electronics MOSFET N-CH 100V 180A D2PAK 7400
  • 7 $7.6099
  • 15 $7.1190
  • 22 $6.8735
  • 32 $6.3825
  • 41 $6.1371
  • 51 $5.8916
$5.8916 / $7.6099 Buy Now

Part Details for IRLS4030TRLPBF

IRLS4030TRLPBF CAD Models

IRLS4030TRLPBF Part Data Attributes

IRLS4030TRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLS4030TRLPBF Infineon Technologies AG Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 305 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 370 W
Pulsed Drain Current-Max (IDM) 730 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLS4030TRLPBF

This table gives cross-reference parts and alternative options found for IRLS4030TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLS4030TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRLS4030TRL Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRLS4030TRLPBF vs AUIRLS4030TRL
CSD19536KTTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments IRLS4030TRLPBF vs CSD19536KTTT
CSD19536KTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments IRLS4030TRLPBF vs CSD19536KTT
AUIRLS4030TRR Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRLS4030TRLPBF vs AUIRLS4030TRR
Part Number Description Manufacturer Compare
AUIRLS4030-7TRR Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier IRLS4030TRLPBF vs AUIRLS4030-7TRR
AUIRLS4030TRR Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRLS4030TRLPBF vs AUIRLS4030TRR
IRLSL4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, IPAK-3 Infineon Technologies AG IRLS4030TRLPBF vs IRLSL4030PBF
AUIRLS4030 Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRLS4030TRLPBF vs AUIRLS4030
IRLB4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRLS4030TRLPBF vs IRLB4030PBF
AUIRLS4030-7P Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 Infineon Technologies AG IRLS4030TRLPBF vs AUIRLS4030-7P
AUIRLS4030-7TRL Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier IRLS4030TRLPBF vs AUIRLS4030-7TRL
CSD19536KTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments IRLS4030TRLPBF vs CSD19536KTT
IRLS4030-7PPBF Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 Infineon Technologies AG IRLS4030TRLPBF vs IRLS4030-7PPBF
AUIRLS4030TRL Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRLS4030TRLPBF vs AUIRLS4030TRL

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