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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43AC3299
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Newark | Mosfet, N-Ch, 100V, 180A, To-263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:180A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0034Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Infineon IRLS4030TRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1025 |
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$3.3100 / $4.7000 | Buy Now |
DISTI #
IRLS4030TRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 180A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1130 In Stock |
|
$1.7339 / $4.6600 | Buy Now |
DISTI #
IRLS4030TRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRLS4030TRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 800 |
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$1.3761 / $1.4507 | Buy Now |
DISTI #
942-IRLS4030TRLPBF
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Mouser Electronics | MOSFETs MOSFT 100V 180A 4.3mOhm 87nC RoHS: Compliant | 1251 |
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$1.7300 / $3.9200 | Buy Now |
DISTI #
70019182
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RS | MOSFET, 100V, 180A, 4.3 mOhm, 87 nC Qg, D2-PAK | Infineon IRLS4030TRLPBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
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$3.5900 / $4.2200 | RFQ |
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Future Electronics | Single N-Channel 100 V 3.9 mOhm 93 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 3200Reel |
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$1.7000 / $1.7600 | Buy Now |
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Future Electronics | Single N-Channel 100 V 3.9 mOhm 93 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 0Reel |
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$1.7000 / $1.7600 | Buy Now |
DISTI #
77264641
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Verical | Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2332 | Americas - 1052 |
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$2.3875 / $4.5000 | Buy Now |
DISTI #
IRLS4030TRLPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 180A, 370W, D2PAK Min Qty: 800 | 0 |
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$2.4200 | RFQ |
DISTI #
C1S322000505124
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Chip1Stop | Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant Container: Cut Tape | 1052 |
|
$1.9800 / $3.5100 | Buy Now |
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IRLS4030TRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLS4030TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 305 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0043 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 370 W | |
Pulsed Drain Current-Max (IDM) | 730 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLS4030TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLS4030TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRLS4030TRL | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRLS4030TRLPBF vs AUIRLS4030TRL |
CSD19536KTTT | 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 | Texas Instruments | IRLS4030TRLPBF vs CSD19536KTTT |
CSD19536KTT | 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 | Texas Instruments | IRLS4030TRLPBF vs CSD19536KTT |
AUIRLS4030TRR | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | IRLS4030TRLPBF vs AUIRLS4030TRR |