Part Details for IRLR3915PBF by Infineon Technologies AG
Overview of IRLR3915PBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLR3915PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRLR3915PBF-ND
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DigiKey | MOSFET N-CH 55V 30A DPAK Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 55V 30A DPAK | 51200 |
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$0.4710 / $0.7070 | Buy Now |
Part Details for IRLR3915PBF
IRLR3915PBF CAD Models
IRLR3915PBF Part Data Attributes
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IRLR3915PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR3915PBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 74 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 120 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR3915PBF
This table gives cross-reference parts and alternative options found for IRLR3915PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR3915PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR3915PBF | Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR3915PBF vs IRLR3915PBF |
| AUIRLR3915 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | International Rectifier | IRLR3915PBF vs AUIRLR3915 |
| IRLR3915 | Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRLR3915PBF vs IRLR3915 |