Part Details for IRLR120TRPBF by Vishay Intertechnologies
Overview of IRLR120TRPBF by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLR120TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31K2377
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Newark | N Channel Mosfet, 100V, 7.7A, D-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:2Vrohs Compliant: Yes |Vishay IRLR120TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Bristol Electronics | 30 |
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RFQ | ||
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DISTI #
IRLR120TRPBF
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TTI | MOSFETs RECOMMENDED ALT IRLR RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Americas - 2000 In Stock |
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$0.6580 | Buy Now |
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DISTI #
IRLR120TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 4.9A, 42W, DPAK,TO252 Min Qty: 1 | 1732 |
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$0.3430 / $0.8980 | Buy Now |
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DISTI #
IRLR120TRPBF
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Avnet Asia | LOGIC MOSFET N-CHANNEL 100V (Alt: IRLR120TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 | 0 |
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RFQ | |
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DISTI #
IRLR120TRPBF
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EBV Elektronik | LOGIC MOSFET N-CHANNEL 100V (Alt: IRLR120TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRLR120TRPBF
IRLR120TRPBF CAD Models
IRLR120TRPBF Part Data Attributes
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IRLR120TRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRLR120TRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 7.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 31 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR120TRPBF
This table gives cross-reference parts and alternative options found for IRLR120TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR120TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR120 | Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRLR120TRPBF vs IRLR120 |
| SIHLR120-GE3 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRLR120TRPBF vs SIHLR120-GE3 |
| IRLR120TRPBF | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R | Vishay Siliconix | IRLR120TRPBF vs IRLR120TRPBF |
| IRLR120TRL | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRLR120TRPBF vs IRLR120TRL |
| IRLR120PBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR120TRPBF vs IRLR120PBF |
| IRLR120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR120TRPBF vs IRLR120 |
| IRLR120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | IRLR120TRPBF vs IRLR120 |
| SIHLR120TR-GE3 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRLR120TRPBF vs SIHLR120TR-GE3 |
| IRLR120TRRPBF | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R | Vishay Siliconix | IRLR120TRPBF vs IRLR120TRRPBF |
| IRLR120TRL | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R | Vishay Siliconix | IRLR120TRPBF vs IRLR120TRL |