Part Details for IRLR110PBF by Vishay Intertechnologies
Overview of IRLR110PBF by Vishay Intertechnologies
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLR110PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K2991
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Newark | Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:4.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRLR110PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.6570 / $1.1200 | Buy Now |
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DISTI #
IRLR110PBF
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Avnet Americas | LOGIC MOSFET N-CHANNEL 100V - Bulk (Alt: IRLR110PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Bulk | 511 |
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$0.5095 | Buy Now |
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DISTI #
844-IRLR110PBF
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Mouser Electronics | MOSFETs RECOMMENDED ALT IRLR RoHS: Compliant | 3074 |
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$0.6150 / $1.2500 | Buy Now |
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DISTI #
E02:0323_00193691
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Arrow Electronics | Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2427 | Europe - 3000 |
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$0.5062 / $1.9957 | Buy Now |
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DISTI #
V99:2348_09218399
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Arrow Electronics | Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2215 | Americas - 36 |
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$0.4332 / $0.6924 | Buy Now |
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DISTI #
70078986
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.54Ohm, ID 4.3A, TO-252AA, PD 25W, VGS +/-10V | Vishay PCS IRLR110PBF RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.7200 / $0.8400 | RFQ |
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Future Electronics | Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 2150Tube |
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$0.6050 / $0.7200 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.6050 / $0.7200 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.3750 / $0.4500 | Buy Now |
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DISTI #
84439476
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Verical | Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK Min Qty: 29 Package Multiple: 1 Date Code: 2427 | Americas - 2987 |
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$0.4704 / $0.7518 | Buy Now |
Part Details for IRLR110PBF
IRLR110PBF CAD Models
IRLR110PBF Part Data Attributes
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IRLR110PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRLR110PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-252AA | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR110PBF
This table gives cross-reference parts and alternative options found for IRLR110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR110TRL | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRLR110PBF vs IRLR110TRL |
| IRLR110TRPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRLR110PBF vs IRLR110TRPBF |
| IRLR110TRLPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRLR110PBF vs IRLR110TRLPBF |
| IRLR110 | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRLR110PBF vs IRLR110 |
| IRLR110 | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | IRLR110PBF vs IRLR110 |
| IRLR110PBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR110PBF vs IRLR110PBF |
| IRLR110PBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRLR110PBF vs IRLR110PBF |
| IRLR110 | Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRLR110PBF vs IRLR110 |
| IRLR110 | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR110PBF vs IRLR110 |
| IRLR110TRR | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRLR110PBF vs IRLR110TRR |