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Transistors Power Field-Effect Transistors IRLR024NPBF

Transistors
IRLR024NPBF
Description: Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

Overview of IRLR024NPBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for IRLR024NPBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   10
RFQ
Quest Components 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 8
  • 1 $0.8500
  • 7 $0.6800
$0.6800 / $0.8500 Buy Now
Quest Components 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 2
  • 1 $1.0500
$1.0500 Buy Now
Quest Components 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 8
  • 1 $0.7500
  • 8 $0.6000
$0.6000 / $0.7500 Buy Now

CAD Models for IRLR024NPBF by International Rectifier
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Part Data Attributes for IRLR024NPBF by International Rectifier
Parametric Data

IRLR024NPBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-252AA
Package Description
LEAD FREE, DPAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas)
68 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
17 A
Drain-source On Resistance-Max
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
38 W
Power Dissipation-Max (Abs)
45 W
Pulsed Drain Current-Max (IDM)
72 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRLR024NPBF
    International Rectifier
    Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
    VS

Alternate Parts for IRLR024NPBF

This table gives cross-reference parts and alternative options found for IRLR024NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR024NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
AUIRLR024NTRR Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR024NPBF vs AUIRLR024NTRR
IRLR024NTRRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRLR024NPBF vs IRLR024NTRRPBF
IRLR024N Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG IRLR024NPBF vs IRLR024N
STD20NF06L-T4 24A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 STMicroelectronics IRLR024NPBF vs STD20NF06L-T4
IRLR024NTRRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRLR024NPBF vs IRLR024NTRRPBF
IRLR024NTRR Power Field-Effect Transistor, 17A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR024NPBF vs IRLR024NTRR
IRLR024NTRL Power Field-Effect Transistor, 17A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR024NPBF vs IRLR024NTRL
IRLR024N Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR024NPBF vs IRLR024N
IRLR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR024NPBF vs IRLR024NTR
IRLR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRLR024NPBF vs IRLR024NTRPBF
Part Number Description Manufacturer Compare
AUIRLR024ZTRR Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 International Rectifier IRLR024NPBF vs AUIRLR024ZTRR
IRLR024ZTRR Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRLR024NPBF vs IRLR024ZTRR
IRLR014NTRRPBF Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR024NPBF vs IRLR014NTRRPBF
IRLR024ZTRPBF Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR024NPBF vs IRLR024ZTRPBF
IRLR014N Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRLR024NPBF vs IRLR014N
IRLR014NTRPBF Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR024NPBF vs IRLR014NTRPBF
AUIRLR014N Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET Infineon Technologies AG IRLR024NPBF vs AUIRLR014N
AUIRLR014NTR Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier IRLR024NPBF vs AUIRLR014NTR
IRLR014NTRLPBF Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR024NPBF vs IRLR014NTRLPBF
IRLR024ZPBF Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR024NPBF vs IRLR024ZPBF

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