Datasheets
IRLMS5703 by:

Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

Part Details for IRLMS5703 by International Rectifier

Overview of IRLMS5703 by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRLMS5703

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Chip1Cloud HEXFET Power MOSFET 6000
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Part Details for IRLMS5703

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IRLMS5703 Part Data Attributes:

IRLMS5703 International Rectifier
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IRLMS5703 International Rectifier Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
Pbfree Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.3 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 13 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLMS5703

This table gives cross-reference parts and alternative options found for IRLMS5703. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS5703, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLMS5703TRPBF Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier IRLMS5703 vs IRLMS5703TRPBF
IRLMS5703TR Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier IRLMS5703 vs IRLMS5703TR
IRLMS5703 Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 Infineon Technologies AG IRLMS5703 vs IRLMS5703
IRLMS5703PBF Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 Infineon Technologies AG IRLMS5703 vs IRLMS5703PBF
IRLMS5703TRPBF Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRLMS5703 vs IRLMS5703TRPBF
Part Number Description Manufacturer Compare
IRLMS5703TR Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier IRLMS5703 vs IRLMS5703TR
IRLMS5703PBF Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 Infineon Technologies AG IRLMS5703 vs IRLMS5703PBF
IRLMS5703 Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 Infineon Technologies AG IRLMS5703 vs IRLMS5703
IRLMS5703TRPBF Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier IRLMS5703 vs IRLMS5703TRPBF
IRLMS5703TRPBF Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRLMS5703 vs IRLMS5703TRPBF

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