Part Details for IRLML6246TRPBF by International Rectifier
Overview of IRLML6246TRPBF by International Rectifier
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLML6246TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | HEXFET Power MOSFET Small Signal Field-Effect Transistor RoHS: Compliant | Europe - 2000 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 6 |
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$1.0000 / $1.5400 | Buy Now |
Part Details for IRLML6246TRPBF
IRLML6246TRPBF CAD Models
IRLML6246TRPBF Part Data Attributes
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IRLML6246TRPBF
International Rectifier
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Datasheet
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IRLML6246TRPBF
International Rectifier
Power Field-Effect Transistor, 4.1A I(D), 20V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOT-23 | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MICRO-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.1 A | |
| Drain-source On Resistance-Max | 0.046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |