Datasheets
IRLML5203GTRPBF by:
Infineon Technologies AG
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

Part Details for IRLML5203GTRPBF by Infineon Technologies AG

Results Overview of IRLML5203GTRPBF by Infineon Technologies AG

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IRLML5203GTRPBF Information

IRLML5203GTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRLML5203GTRPBF

Part # Distributor Description Stock Price Buy
DISTI # 70019844
RS MOSFET, P-CH, -30V, -3A, 98 MOHM, 9.5 NC QG, LOGIC LVL, SOT-23, HALOGEN-FREE | Infineon IRLML5203GTR... PBF more RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Container: Bulk 0
  • 6,000 $0.3390
  • 60,000 $0.3220
  • 300,000 $0.3050
  • 600,000 $0.2880
$0.2880 / $0.3390 RFQ
DISTI # SP001567222
EBV Elektronik Trans MOSFET PCH 30V 076A 3Pin Micro TR (Alt: SP001567222) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET P-CH 30V 3A SOT-23-3 1162
  • 185 $0.2708
  • 455 $0.2222
  • 700 $0.2153
  • 960 $0.2084
  • 1,245 $0.2014
  • 1,665 $0.1806
$0.1806 / $0.2708 Buy Now

Part Details for IRLML5203GTRPBF

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IRLML5203GTRPBF Part Data Attributes

IRLML5203GTRPBF Infineon Technologies AG
Buy Now Datasheet
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IRLML5203GTRPBF Infineon Technologies AG Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOT-23, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.098 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 43 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.25 W
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLML5203GTRPBF

This table gives cross-reference parts and alternative options found for IRLML5203GTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML5203GTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRLML5203TRPBF Infineon Technologies AG $0.1130 Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, MICRO-3 IRLML5203GTRPBF vs IRLML5203TRPBF

IRLML5203GTRPBF Related Parts

IRLML5203GTRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRLML5203GTRPBF is -55°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.

  • The recommended gate drive voltage for the IRLML5203GTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRLML5203GTRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.

  • The maximum allowable power dissipation for the IRLML5203GTRPBF is 125W, but this value can be derated based on the operating temperature and other factors.