Part Details for IRLML2502TR by International Rectifier
Overview of IRLML2502TR by International Rectifier
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLML2502TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 5610 |
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Bristol Electronics | 768 |
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Bristol Electronics | Min Qty: 7 | 1685 |
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$0.2100 / $0.7500 | Buy Now |
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Quest Components | 4.2 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET | 114 |
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$0.1080 / $0.1620 | Buy Now |
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Quest Components | 4.2 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET | 4488 |
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$0.1000 / $0.5000 | Buy Now |
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Quest Components | 4.2 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET | 572 |
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$0.1620 / $0.5400 | Buy Now |
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Quest Components | 4.2 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET | 1348 |
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$0.2600 / $1.0000 | Buy Now |
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Quest Components | 4.2 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET | 1573 |
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$1.1633 / $3.1020 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 2850 |
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Part Details for IRLML2502TR
IRLML2502TR CAD Models
IRLML2502TR Part Data Attributes:
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IRLML2502TR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLML2502TR
International Rectifier
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Package Description | MICRO-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLML2502TR
This table gives cross-reference parts and alternative options found for IRLML2502TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML2502TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| IRLML2502 | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier | IRLML2502TR vs IRLML2502 |
| IRLML2502PBF | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3 | International Rectifier | IRLML2502TR vs IRLML2502PBF |
| IRLML2502GTRPBF | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML2502TR vs IRLML2502GTRPBF |