Datasheets
IRLML2502PBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3

Part Details for IRLML2502PBF by International Rectifier

Overview of IRLML2502PBF by International Rectifier

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Price & Stock for IRLML2502PBF

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4.2A I(D),SOT-23 3
  • 1 $0.3354
$0.3354 Buy Now

Part Details for IRLML2502PBF

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IRLML2502PBF Part Data Attributes

IRLML2502PBF International Rectifier
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IRLML2502PBF International Rectifier Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOT-23
Package Description HALOGEN AND LEAD FREE, MICRO-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.2 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLML2502PBF

This table gives cross-reference parts and alternative options found for IRLML2502PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML2502PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRLML2502TRPBF Infineon Technologies AG $0.1391 Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3 IRLML2502PBF vs IRLML2502TRPBF
IRLML2502 International Rectifier Check for Price Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 IRLML2502PBF vs IRLML2502
IRLML2502GTRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML2502PBF vs IRLML2502GTRPBF
IRLML2502GPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML2502PBF vs IRLML2502GPBF