Part Details for IRLML2246TRPBF by International Rectifier
Overview of IRLML2246TRPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLML2246TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 2682 |
|
RFQ | ||
|
|
Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR | 704 |
|
$0.1062 / $0.3540 | Buy Now |
|
|
ComSIT USA | HEXFET POWER MOSFET Small Signal Field-Effect Transistor RoHS: Compliant |
|
|
RFQ | |
|
|
Chip-Germany GmbH | RoHS: Not Compliant | 2532 |
|
RFQ |
Part Details for IRLML2246TRPBF
IRLML2246TRPBF CAD Models
IRLML2246TRPBF Part Data Attributes
|
|
IRLML2246TRPBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRLML2246TRPBF
International Rectifier
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOT-23 | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MICRO-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 11 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |