Datasheets
IRLL2705PBF by:

Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN

Part Details for IRLL2705PBF by International Rectifier

Overview of IRLL2705PBF by International Rectifier

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Price & Stock for IRLL2705PBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   1035
RFQ
Bristol Electronics   129
RFQ
Bristol Electronics   Min Qty: 2 41
  • 2 $3.0000
  • 8 $2.2500
  • 24 $1.8750
$1.8750 / $3.0000 Buy Now
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR 828
  • 1 $0.9865
  • 102 $0.4933
  • 406 $0.3946
$0.3946 / $0.9865 Buy Now
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR 32
  • 1 $4.0000
  • 9 $2.5000
  • 31 $1.5000
$1.5000 / $4.0000 Buy Now
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR 10
  • 1 $0.5919
  • 9 $0.4933
$0.4933 / $0.5919 Buy Now

Part Details for IRLL2705PBF

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IRLL2705PBF Part Data Attributes

IRLL2705PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRLL2705PBF International Rectifier Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-261AA
Package Description LEAD FREE, SOT-223, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2.1 W
Power Dissipation-Max (Abs) 2.1 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for IRLL2705PBF

This table gives cross-reference parts and alternative options found for IRLL2705PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL2705PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLL2705TRPBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705PBF vs IRLL2705TRPBF
IRLL2705TR Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRLL2705PBF vs IRLL2705TR
DMN6040SE-13 Small Signal Field-Effect Transistor, Diodes Incorporated IRLL2705PBF vs DMN6040SE-13
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705PBF vs IRLL2705PBF
Part Number Description Manufacturer Compare
IRLL2705TR Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRLL2705PBF vs IRLL2705TR
IRLL2705PBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705PBF vs IRLL2705PBF
IRLL2705 Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier IRLL2705PBF vs IRLL2705
IRLL2705TRPBF Power Field-Effect Transistor, 5.2A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG IRLL2705PBF vs IRLL2705TRPBF
DMN6040SE-13 Small Signal Field-Effect Transistor, Diodes Incorporated IRLL2705PBF vs DMN6040SE-13

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