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Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40M7983
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Newark | N Channel Mosfet, 55V, 4.4A Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:3.1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLL024NTRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2129 |
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$0.3270 | Buy Now |
DISTI #
86AK5406
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Newark | Mosfet, N-Ch, 55V, 3.1A, Sot-223 Rohs Compliant: Yes |Infineon IRLL024NTRPBF Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4140 | Buy Now |
DISTI #
IRLL024NPBFCT-ND
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DigiKey | MOSFET N-CH 55V 3.1A SOT223 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
98688 In Stock |
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$0.2700 / $0.8200 | Buy Now |
DISTI #
IRLL024NTRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL024NTRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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RFQ | |
DISTI #
IRLL024NTRPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL024NTRPBF) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2430 / $0.2970 | Buy Now |
DISTI #
IRLL024NTRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRLL024NTRPBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2430 / $0.2970 | Buy Now |
DISTI #
40M7983
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Avnet Americas | Trans MOSFET N-CH 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 40M7983) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 2129 Partner Stock |
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$0.6190 / $0.9980 | Buy Now |
DISTI #
942-IRLL024NTRPBF
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Mouser Electronics | MOSFET MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl RoHS: Compliant | 27637 |
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$0.2700 / $0.8200 | Buy Now |
DISTI #
70017816
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.065Ohm, ID 4.4A, SOT-223,PD 2.1W, VGS +/-16V | Infineon IRLL024NTRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$0.4600 / $0.5400 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.1 Ohm 15.6 nC HEXFET® Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 127500Reel |
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$0.2350 / $0.2500 | Buy Now |
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IRLL024NTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL024NTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLL024NTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL024NTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRLL024NTR | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | Infineon Technologies AG | IRLL024NTRPBF vs AUIRLL024NTR |
IRLL024NTR | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | IRLL024NTRPBF vs IRLL024NTR |
AUIRLL024NTR | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | International Rectifier | IRLL024NTRPBF vs AUIRLL024NTR |
IRLL024N | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | IRLL024NTRPBF vs IRLL024N |
AUIRLL024N | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | International Rectifier | IRLL024NTRPBF vs AUIRLL024N |
IRLL024NTR | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | Infineon Technologies AG | IRLL024NTRPBF vs IRLL024NTR |
IRLL024NPBF | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN | International Rectifier | IRLL024NTRPBF vs IRLL024NPBF |
IRLL024NPBF | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRLL024NTRPBF vs IRLL024NPBF |