Part Details for IRLL014NTR by International Rectifier
Results Overview of IRLL014NTR by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRLL014NTR Information
IRLL014NTR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLL014NTR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3834 |
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RFQ | ||
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Bristol Electronics | 2338 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,2.8A I(D),SOT-223 | 3067 |
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$0.4375 / $1.2500 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,2.8A I(D),SOT-223 | 944 |
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$0.2500 / $0.6000 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Sili... more RoHS: Not Compliant ECCN: EAR99 |
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RFQ | |
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Vyrian | Transistors | 1016 |
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RFQ |
Part Details for IRLL014NTR
IRLL014NTR CAD Models
IRLL014NTR Part Data Attributes
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IRLL014NTR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLL014NTR
International Rectifier
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 32 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |