Datasheets
IRLL014NPBF by:

Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 4 PIN

Part Details for IRLL014NPBF by International Rectifier

Overview of IRLL014NPBF by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRLL014NPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   2560
RFQ
Bristol Electronics   182
RFQ
Quest Components 2.8 A, 55 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 71
  • 1 $0.4905
  • 11 $0.4088
  • 50 $0.3270
$0.3270 / $0.4905 Buy Now
Quest Components 2.8 A, 55 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 2048
  • 1 $0.8175
  • 123 $0.4088
  • 490 $0.3270
$0.3270 / $0.8175 Buy Now

Part Details for IRLL014NPBF

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IRLL014NPBF Part Data Attributes:

IRLL014NPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRLL014NPBF International Rectifier Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-261AA
Package Description LEAD FREE, SOT-223, 4 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, FAST SWITCHING
Avalanche Energy Rating (Eas) 32 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 2.8 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLL014NPBF

This table gives cross-reference parts and alternative options found for IRLL014NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL014NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STN2NF06L 2A, 60V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics IRLL014NPBF vs STN2NF06L
IRLL014NTR Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRLL014NPBF vs IRLL014NTR
Part Number Description Manufacturer Compare
STN2NF06L 2A, 60V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics IRLL014NPBF vs STN2NF06L
IRLL014NTR Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRLL014NPBF vs IRLL014NTR

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