Part Details for IRLL014N by International Rectifier
Overview of IRLL014N by International Rectifier
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLL014N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 17 |
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RFQ | ||
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Bristol Electronics | Min Qty: 7 | 90 |
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$0.3750 / $0.7500 | Buy Now |
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Bristol Electronics | 2778 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SOT-223 | 921 |
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$0.2100 / $0.4500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-223 | 72 |
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$0.3000 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-223 | 15 |
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$0.5600 / $0.7000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-223 | 1953 |
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$0.1950 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-223 | 965 |
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$0.4500 / $1.1250 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-223 | 268 |
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$0.6500 / $1.3000 | Buy Now |
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Win Source Electronics | HEXFET Power MOSFET | 232863 |
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$0.2080 / $0.3110 | Buy Now |
Part Details for IRLL014N
IRLL014N CAD Models
IRLL014N Part Data Attributes:
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IRLL014N
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLL014N
International Rectifier
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 32 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLL014N
This table gives cross-reference parts and alternative options found for IRLL014N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL014N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQT13N06L | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | IRLL014N vs FQT13N06L |
| IRLL014NTRPBF | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRLL014N vs IRLL014NTRPBF |
| FQT13N06S62Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRLL014N vs FQT13N06S62Z |
| FQT13N06 | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | IRLL014N vs FQT13N06 |
| FQT13N06LTF | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223, 4000-REEL | onsemi | IRLL014N vs FQT13N06LTF |
| FQT13N06LS62Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRLL014N vs FQT13N06LS62Z |
| FQT13N06TF | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | IRLL014N vs FQT13N06TF |
| FQT13N06LL99Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRLL014N vs FQT13N06LL99Z |
| FQT13N06LTF | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | IRLL014N vs FQT13N06LTF |
| IRLL014N | Small Signal Field-Effect Transistor | Infineon Technologies AG | IRLL014N vs IRLL014N |