Part Details for IRLB8721PBF by International Rectifier
Overview of IRLB8721PBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLB8721PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 100 |
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RFQ | ||
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Quest Components | 62A, 30V, 0.0087OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 80 |
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$0.6750 / $1.3500 | Buy Now |
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Quest Components | 62A, 30V, 0.0087OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 80 |
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$0.6750 / $1.3500 | Buy Now |
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Rochester Electronics | IRLB8721 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 250 |
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$0.4673 / $0.5498 | Buy Now |
Part Details for IRLB8721PBF
IRLB8721PBF CAD Models
IRLB8721PBF Part Data Attributes:
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IRLB8721PBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLB8721PBF
International Rectifier
Power Field-Effect Transistor, 62A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | LEAD FREE PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 98 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 62 A | |
Drain-source On Resistance-Max | 0.0087 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Pulsed Drain Current-Max (IDM) | 250 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLB8721PBF
This table gives cross-reference parts and alternative options found for IRLB8721PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLB8721PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK3134L-E | Nch Single Power Mosfet 30V 75A 5Mohm LDPAK(L)/To-262, LDPAK(L), /Tube | Renesas Electronics Corporation | IRLB8721PBF vs 2SK3134L-E |
IRF3707L | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | International Rectifier | IRLB8721PBF vs IRF3707L |
IPP114N03LG | Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IRLB8721PBF vs IPP114N03LG |
IRF3707LPBF | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | IRLB8721PBF vs IRF3707LPBF |
IPP065N03LGXKSA1 | Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IRLB8721PBF vs IPP065N03LGXKSA1 |
2SK3134(L) | 75A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | IRLB8721PBF vs 2SK3134(L) |
H7N0307LD | Power Field-Effect Transistor, 60A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Hitachi Ltd | IRLB8721PBF vs H7N0307LD |
IRF3707ZCSTRR | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRLB8721PBF vs IRF3707ZCSTRR |
IPP07N03LBG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IRLB8721PBF vs IPP07N03LBG |
IRF3707ZSTRL | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRLB8721PBF vs IRF3707ZSTRL |