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Transistors / Power Field-Effect Transistors / IRLB8314PBF
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IRLB8314PBF by:

Power Field-Effect Transistor,

Part Details for IRLB8314PBF by Infineon Technologies AG

Overview of IRLB8314PBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRLB8314PBF

Part # Distributor Description Stock Price Buy
DISTI # 97Y1846
Newark Mosfet, N-Ch, 30V, 130A, To-220Ab-3, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:130A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IRLB8314PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1.1100
  • 10 $0.9250
  • 100 $0.7350
  • 500 $0.6340
  • 1,000 $0.5740
  • 3,000 $0.5410
  • 10,000 $0.4630
$0.4630 / $1.1100 Buy Now
DISTI # 448-IRLB8314PBF-ND
DigiKey MOSFET N-CH 30V 171A TO220-3 Min Qty: 1 Lead time: 12 Weeks Container: Tube 1549
In Stock
  • 1 $1.0000
  • 50 $0.8046
  • 100 $0.6376
  • 500 $0.5404
  • 1,000 $0.4402
  • 2,000 $0.4144
  • 5,000 $0.3947
  • 10,000 $0.3765
$0.3765 / $1.0000 Buy Now
DISTI # IRLB8314PBF
Avnet Americas MOSFET 30V 184A 2.4 MOHM 44 NC QG TO-220 - Rail/Tube (Alt: IRLB8314PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.4133
  • 1,200 $0.4008
  • 2,200 $0.3883
  • 5,000 $0.3757
  • 10,000 $0.3632
  • 50,000 $0.3507
  • 100,000 $0.3382
$0.3382 / $0.4133 Buy Now
DISTI # 942-IRLB8314PBF
Mouser Electronics MOSFET TRENCH <= 40V RoHS: Compliant 2008
  • 1 $1.0000
  • 10 $0.8050
  • 100 $0.6380
  • 500 $0.5410
  • 1,000 $0.4400
  • 5,000 $0.3940
  • 10,000 $0.3760
$0.3760 / $1.0000 Buy Now
Future Electronics MOSFET N-CH 30V 171A TO220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 158000
Tube
  • 1,000 $0.3900
  • 2,000 $0.3800
  • 4,000 $0.3750
  • 5,000 $0.3700
  • 15,000 $0.3550
$0.3550 / $0.3900 Buy Now
Future Electronics MOSFET N-CH 30V 171A TO220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $0.3900
  • 2,000 $0.3800
  • 4,000 $0.3750
  • 5,000 $0.3700
  • 15,000 $0.3550
$0.3550 / $0.3900 Buy Now
Rochester Electronics Trench <= 40V RoHS: Compliant Status: Active Min Qty: 1 100
  • 1 $0.4384
  • 25 $0.4296
  • 100 $0.4121
  • 500 $0.3946
  • 1,000 $0.3726
$0.3726 / $0.4384 Buy Now
DISTI # IRLB8314PBF
TME Transistor: N-MOSFET, unipolar, 30V, 120A, Idm: 664A, 125W, TO220AB Min Qty: 1 233
  • 1 $0.9540
  • 10 $0.7900
  • 50 $0.6790
  • 100 $0.6300
  • 250 $0.5670
  • 500 $0.5200
  • 1,000 $0.4710
  • 2,000 $0.4230
$0.4230 / $0.9540 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 30V, 120A, Idm: 664A, 125W, TO220AB 1000
RFQ
DISTI # SP001572766
EBV Elektronik MOSFET 30V 184A 2.4 MOHM 44 NC QG TO-220 (Alt: SP001572766) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 171A 2.4m10V68A 125W 2.2V100uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS 1
  • 1 $0.8028
  • 10 $0.6207
  • 50 $0.5059
  • 100 $0.3895
  • 500 $0.3373
  • 1,000 $0.3149
$0.3149 / $0.8028 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 126000
  • 1,000 $0.5071
  • 126,000 $0.4733
$0.4733 / $0.5071 Buy Now

Part Details for IRLB8314PBF

IRLB8314PBF CAD Models

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IRLB8314PBF Part Data Attributes:

Parametric Data
IRLB8314PBF Infineon Technologies AG
Buy Now Datasheet
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IRLB8314PBF Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 130 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 500 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 664 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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