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Transistors / Power Field-Effect Transistors / IRLB3036PBF
Datasheets
IRLB3036PBF by:

Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRLB3036PBF by Infineon Technologies AG

Overview of IRLB3036PBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRLB3036PBF

Part # Distributor Description Stock Price Buy
DISTI # 80P4466
Newark Mosfet, N-Ch, 60V, 165A, 175Deg C, 380W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:165A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon IRLB3036PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 428
  • 1 $4.3100
  • 10 $3.9300
  • 25 $3.4200
  • 50 $3.1600
  • 100 $2.9000
  • 250 $2.8500
  • 500 $2.5900
$2.5900 / $4.3100 Buy Now
DISTI # 448-IRLB3036PBF-ND
DigiKey MOSFET N-CH 60V 195A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 20235
In Stock
  • 1 $4.1400
  • 50 $3.2842
  • 100 $2.8150
  • 500 $2.5022
  • 1,000 $2.1425
  • 2,000 $2.0174
  • 5,000 $1.9355
$1.9355 / $4.1400 Buy Now
DISTI # IRLB3036PBF
Avnet Americas Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRLB3036PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Container: Tube 32
RFQ
DISTI # 942-IRLB3036PBF
Mouser Electronics MOSFET MOSFT 60V 370A 2.4mOhm 91nC Log Lvl RoHS: Compliant 3257
  • 1 $4.1300
  • 10 $4.0300
  • 25 $3.1600
  • 100 $2.7100
  • 250 $2.6900
  • 500 $2.4300
  • 1,000 $2.1100
  • 2,000 $2.0100
$2.0100 / $4.1300 Buy Now
DISTI # 70019831
RS IRLB3036PBF N-channel MOSFET Transistor, 270 A, 60 V, 3-Pin TO-220AB | Infineon IRLB3036PBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $4.5500
  • 10 $4.3200
  • 20 $4.1000
  • 40 $3.8600
  • 200 $3.6400
$3.6400 / $4.5500 RFQ
Future Electronics Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Container: Tube 1000
Tube
  • 50 $1.6900
  • 150 $1.6500
  • 250 $1.6300
  • 750 $1.5900
  • 1,250 $1.5500
$1.5500 / $1.6900 Buy Now
Future Electronics Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 900
Tube
  • 50 $2.1700
  • 150 $2.1200
  • 500 $2.0700
  • 1,000 $2.0300
  • 2,000 $1.9800
$1.9800 / $2.1700 Buy Now
Bristol Electronics   30
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 195A I(D), 60V, 0.0024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB 820
  • 1 $6.1200
  • 266 $3.3660
  • 595 $3.0600
$3.0600 / $6.1200 Buy Now
DISTI # IRLB3036PBF
Avnet Americas Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRLB3036PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Container: Tube 32
RFQ
DISTI # IRLB3036PBF
TME Transistor: N-MOSFET, unipolar, 60V, 270A, 380W, TO220AB Min Qty: 1 34
  • 1 $3.6100
  • 3 $3.1900
  • 10 $2.8700
  • 50 $2.6700
$2.6700 / $3.6100 Buy Now
Ameya Holding Limited Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3 1628
RFQ
Ameya Holding Limited   Min Qty: 50 760
  • 50 $4.2182
  • 100 $4.0916
  • 200 $3.9689
$3.9689 / $4.2182 Buy Now
DISTI # IRLB3036PBF
Avnet Americas Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRLB3036PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Container: Tube 32
RFQ
DISTI # TMOSP12588
Rutronik N-CH 60V 270A 2,4mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube Stock DE - 550
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 50 $2.5400
  • 100 $2.4000
  • 250 $2.2500
  • 450 $2.0400
  • 850 $1.9600
$1.9600 / $2.5400 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2018 Date Code: 2018 25
  • 1 $2.8300
  • 10 $2.2400
  • 50 $2.1700
  • 100 $2.1000
  • 500 $2.0700
  • 1,000 $2.0400
$2.0400 / $2.8300 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 1000
  • 1 $2.8300
  • 10 $2.2400
  • 50 $2.1700
  • 100 $2.1000
  • 500 $2.0700
  • 1,000 $2.0400
$2.0400 / $2.8300 Buy Now
DISTI # SP001568396
EBV Elektronik Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-220AB (Alt: SP001568396) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 2000
Buy Now
DISTI # 1698300
element14 Asia-Pacific MOSFET, N-CH 60V 195A TO220 RoHS: Compliant Min Qty: 1 Container: Each 428
  • 1 $4.3446
  • 10 $3.6548
  • 100 $2.8769
  • 500 $2.6347
  • 1,000 $2.2457
$2.2457 / $4.3446 Buy Now
DISTI # 1698300
Farnell MOSFET, N-CH 60V 195A TO220 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each 428
  • 1 $4.6206
  • 10 $3.2843
  • 100 $2.7349
  • 500 $2.4976
  • 1,000 $2.1979
$2.1979 / $4.6206 Buy Now
New Advantage Corporation Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 1500
  • 100 $2.6000
  • 1,500 $2.4300
$2.4300 / $2.6000 Buy Now
Sense Electronic Company Limited TO-220 1750
RFQ

Part Details for IRLB3036PBF

IRLB3036PBF CAD Models

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IRLB3036PBF Part Data Attributes

Parametric Data
IRLB3036PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLB3036PBF Infineon Technologies AG Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 290 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 195 A
Drain-source On Resistance-Max 0.0024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 380 W
Pulsed Drain Current-Max (IDM) 1100 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLB3036PBF

This table gives cross-reference parts and alternative options found for IRLB3036PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLB3036PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLB3036PBF Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRLB3036PBF vs IRLB3036PBF
Part Number Description Manufacturer Compare
IRLB3036PBF Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRLB3036PBF vs IRLB3036PBF

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