Part Details for IRL630 by International Rectifier
Overview of IRL630 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRL630
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 1006 |
|
RFQ | ||
|
Quest Components | 8 A, 200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 116 |
|
$3.4410 / $5.5800 | Buy Now |
|
Quest Components | 8 A, 200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 11 |
|
$2.7900 / $5.5800 | Buy Now |
Part Details for IRL630
IRL630 CAD Models
IRL630 Part Data Attributes
|
IRL630
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRL630
International Rectifier
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 74 W | |
Power Dissipation-Max (Abs) | 74 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for IRL630
This table gives cross-reference parts and alternative options found for IRL630. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL630, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRL630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Vishay Intertechnologies | IRL630 vs IRL630 |
IRL630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Siliconix | IRL630 vs IRL630 |
IRL630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRL630 vs IRL630 |
IRL630 | Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRL630 vs IRL630 |
SIHL630 | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN, FET General Purpose Power | Vishay Siliconix | IRL630 vs SIHL630 |