Datasheets
IRL530N by:

Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for IRL530N by International Rectifier

Overview of IRL530N by International Rectifier

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Price & Stock for IRL530N

Part # Distributor Description Stock Price Buy
Bristol Electronics   190
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 19
  • 1 $3.0300
  • 4 $2.0200
  • 13 $1.5150
$1.5150 / $3.0300 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 40
  • 1 $3.3600
  • 10 $2.4640
  • 31 $2.2400
$2.2400 / $3.3600 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 144
  • 1 $3.0300
  • 35 $2.0200
  • 125 $1.8685
$1.8685 / $3.0300 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 41
  • 1 $3.0300
  • 11 $2.2220
  • 35 $2.0200
$2.0200 / $3.0300 Buy Now
Chip1Cloud HEXFET Power MOSFET 4000
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 475
Buy Now

Part Details for IRL530N

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IRL530N Part Data Attributes:

IRL530N International Rectifier
Buy Now Datasheet
Compare Parts:
IRL530N International Rectifier Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 63 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL530N

This table gives cross-reference parts and alternative options found for IRL530N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL530N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRL530NPBF Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRL530N vs IRL530NPBF
IRL530N Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRL530N vs IRL530N
IRL530NHR Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRL530N vs IRL530NHR
Part Number Description Manufacturer Compare
IRL530NHR Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRL530N vs IRL530NHR
IRL530NLPBF Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRL530N vs IRL530NLPBF
IRL530N Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRL530N vs IRL530N
IRL530NL Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRL530N vs IRL530NL
IRL530NPBF Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRL530N vs IRL530NPBF

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