Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Symbol
Footprint
3D Model
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max
METAL-OXIDE SEMICONDUCTOR
Operating Temperature-Max
Pulsed Drain Current-Max (IDM)
Transistor Element Material
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Vishay Siliconix
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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IRL520PBF - International Rectifier
IRL520 - International Rectifier
IRL520PBF - Vishay Intertechnologies
IRL520PBF - International Rectifier
IRL520 - International Rectifier
IRL520 - Samsung Semiconductor
This table gives cross-reference parts and alternative options found for IRL520PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL520PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number
Description
Manufacturer
Compare
IRL520PBF
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
International Rectifier
IRL520PBF vs IRL520PBF
IRL520
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
International Rectifier
IRL520PBF vs IRL520
IRL520PBF
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Vishay Intertechnologies
IRL520PBF vs IRL520PBF
Part Number
Description
Manufacturer
Compare
IRL520PBF
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
International Rectifier
IRL520PBF vs IRL520PBF
IRL520
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
International Rectifier
IRL520PBF vs IRL520
IRL520
Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung Semiconductor
IRL520PBF vs IRL520