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Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1800
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Newark | Mosfet, N-Ch, 100V, 10A, To-263Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRL520NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9730 |
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$0.4110 | Buy Now |
DISTI #
448-IRL520NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 10A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1562 In Stock |
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$0.4501 / $1.2000 | Buy Now |
DISTI #
IRL520NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRL520NSTRLPBF) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4043 / $0.4942 | Buy Now |
DISTI #
34AC1800
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Avnet Americas | Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 34AC1800) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 3083 Partner Stock |
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$0.7920 / $1.2400 | Buy Now |
DISTI #
942-IRL520NSTRLPBF
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Mouser Electronics | MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv RoHS: Compliant | 32880 |
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$0.4600 / $1.1800 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.26 Ohm 20 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 4000Reel |
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$0.3900 / $0.4250 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.26 Ohm 20 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel | 88Cut Tape/Mini-Reel |
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$0.7250 / $1.0100 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.26 Ohm 20 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.3900 / $0.4250 | Buy Now |
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Rochester Electronics | IRL520NSTRLPBF - PLANAR >= 100V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 800 |
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$0.4455 / $0.5241 | Buy Now |
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Ameya Holding Limited | Min Qty: 800 | 410 |
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$0.6927 / $0.7142 | Buy Now |
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IRL520NSTRLPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRL520NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 85 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.22 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 50 pF | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 3.8 W | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |