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Transistors / Power Field-Effect Transistors / IRL520NS
Datasheets
IRL520NS by:
Infineon Technologies AG
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

Part Details for IRL520NS by Infineon Technologies AG

Results Overview of IRL520NS by Infineon Technologies AG

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IRL520NS Information

IRL520NS by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRL520NS

Part # Distributor Description Stock Price Buy
Win Source Electronics HEXFET Power MOSFET | MOSFET N-CH 100V 10A D2PAK 11756
  • 70 $0.7583
  • 165 $0.6222
  • 250 $0.6028
  • 345 $0.5834
  • 445 $0.5639
  • 595 $0.5056
$0.5056 / $0.7583 Buy Now

Part Details for IRL520NS

IRL520NS CAD Models

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IRL520NS Part Data Attributes

Parametric Data
IRL520NS Infineon Technologies AG
Buy Now Datasheet
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IRL520NS Infineon Technologies AG Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description PLASTIC, D2PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 35 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL520NS

This table gives cross-reference parts and alternative options found for IRL520NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL520NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRL520NSTRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL520NS vs IRL520NSTRRPBF
IRL520NS International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRL520NS vs IRL520NS
IRL520NSPBF International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL520NS vs IRL520NSPBF
Part Number Manufacturer Composite Price Description Compare
IRF520NSTRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, IRL520NS vs IRF520NSTRRPBF
IRF520NSTRR International Rectifier Check for Price Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRL520NS vs IRF520NSTRR
IRF520NS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRL520NS vs IRF520NS
IRL520NSPBF Infineon Technologies AG $0.6157 Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL520NS vs IRL520NSPBF
IRL520NSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL520NS vs IRL520NSTRLPBF
IRF520NSPBF International Rectifier Check for Price Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL520NS vs IRF520NSPBF
IRL520NSTRL International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRL520NS vs IRL520NSTRL
FQD13N10L Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 IRL520NS vs FQD13N10L
FQD13N10LTF Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 IRL520NS vs FQD13N10LTF
FQD13N10LTM onsemi $0.5169 Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL IRL520NS vs FQD13N10LTM

IRL520NS Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRL520NS is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and the maximum drain-source voltage (Vds). For the IRL520NS, the maximum Tj is 150°C and the maximum Vds is 100V. Therefore, the SOA would be approximately 100V x 10A = 1000W.

  • To ensure proper thermal management of the IRL520NS, it is essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to provide a low thermal resistance path to the heat sink or ambient air. The datasheet provides a thermal resistance (RthJA) of 62°C/W, which can be used to estimate the maximum allowable power dissipation for a given temperature rise.

  • The recommended gate drive voltage for the IRL520NS is not explicitly stated in the datasheet, but it is typically in the range of 10V to 15V. A higher gate drive voltage can provide faster switching times and lower gate charge, but it also increases the risk of gate oxide damage. A lower gate drive voltage can provide a more reliable operation, but it may result in slower switching times and higher gate charge. The optimal gate drive voltage depends on the specific application and the trade-offs between switching speed, gate charge, and reliability.

  • The IRL520NS is a sensitive device and can be damaged by electrostatic discharge (ESD). To protect the device from ESD, it is essential to handle the device with care and follow proper ESD handling procedures. This includes using ESD-safe packaging, wearing ESD-protective clothing, and using ESD-protected workstations. Additionally, the device should be connected to a ground plane or a static-dissipative material to prevent static buildup. The datasheet provides an ESD rating of 2kV human body model (HBM) and 200V machine model (MM), which can be used to guide ESD protection design.

  • The recommended PCB layout for the IRL520NS is not explicitly stated in the datasheet, but it is essential to follow good PCB design practices to ensure reliable operation. This includes providing a low-inductance path for the drain and source connections, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. Additionally, the PCB should be designed to provide a good thermal path for heat dissipation. The datasheet provides a package outline and a recommended land pattern, which can be used to guide PCB design.