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Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K3057
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Newark | Mosfet, N-Ch, 55V, 77A, 175Deg C, 130W, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:77A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRL3705NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.8340 / $1.7600 | Buy Now |
DISTI #
IRL3705NPBF-ND
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DigiKey | MOSFET N-CH 55V 89A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
1280 In Stock |
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$0.7760 / $1.8500 | Buy Now |
DISTI #
IRL3705NPBF
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Avnet Americas | Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB T/R - Rail/Tube (Alt: IRL3705NPBF) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.6984 / $0.8536 | Buy Now |
DISTI #
942-IRL3705NPBF
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Mouser Electronics | MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB RoHS: Compliant | 1652 |
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$0.7760 / $1.6500 | Buy Now |
DISTI #
70017090
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.01Ohm, ID 89A, TO-220AB, PD 170W, VGS +/-16V | Infineon IRL3705NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.6800 / $2.1000 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 2000Tube |
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$0.4650 / $0.5500 | Buy Now |
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Future Electronics | Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 1750Tube |
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$0.7600 / $0.9050 | Buy Now |
DISTI #
IRL3705NPBF
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Avnet Americas | Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB T/R - Rail/Tube (Alt: IRL3705NPBF) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
|
$0.6984 / $0.8536 | Buy Now |
DISTI #
IRL3705NPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 89A, 130W, TO220AB Min Qty: 1 | 280 |
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$1.3700 / $2.0300 | Buy Now |
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Ameya Holding Limited | Min Qty: 1 | 61 |
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$1.7635 / $1.9465 | Buy Now |
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IRL3705NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL3705NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 340 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 89 A | |
Drain-source On Resistance-Max | 0.012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 310 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRL3705NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL3705NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRL3705N | Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRL3705NPBF vs IRL3705N |
IRL3705N | Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRL3705NPBF vs IRL3705N |
IRL3705NPBF | Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRL3705NPBF vs IRL3705NPBF |
AUIRL3705N | Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier | IRL3705NPBF vs AUIRL3705N |