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Transistors / Power Field-Effect Transistors / IRL2505PBF
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IRL2505PBF by:

Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRL2505PBF by Infineon Technologies AG

Overview of IRL2505PBF by Infineon Technologies AG

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Price & Stock for IRL2505PBF

Part # Distributor Description Stock Price Buy
DISTI # 38K3044
Newark Mosfet Transistor, N Channel, 104 A, 55 V, 8 Mohm, 10 V, 2 V Rohs Compliant: Yes |Infineon IRL2505PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 131
  • 1 $2.4300
  • 10 $1.8500
  • 100 $1.6600
  • 500 $1.4400
  • 1,000 $1.2100
  • 3,000 $1.1400
  • 5,000 $1.1200
$1.1200 / $2.4300 Buy Now
DISTI # IRL2505PBF-ND
DigiKey MOSFET N-CH 55V 104A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube 9199
In Stock
  • 1 $2.5900
  • 50 $2.0820
  • 100 $1.7131
  • 500 $1.4495
  • 1,000 $1.2299
  • 2,000 $1.1684
  • 5,000 $1.1245
$1.1245 / $2.5900 Buy Now
DISTI # IRL2505PBF
Avnet Americas Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL2505PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube 883
  • 1 $0.8527
  • 10 $0.8408
  • 30 $0.8288
  • 50 $0.8168
  • 100 $0.8049
$0.8049 / $0.8527 Buy Now
DISTI # 942-IRL2505PBF
Mouser Electronics MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB RoHS: Compliant 2075
  • 1 $2.2000
  • 10 $1.8000
  • 100 $1.6500
  • 500 $1.4500
  • 1,000 $1.2100
  • 2,000 $1.1500
  • 5,000 $1.1100
$1.1100 / $2.2000 Buy Now
DISTI # 70017478
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.008Ohm, ID 104A, TO-220AB, PD 200W, VGS +/-16V | Infineon IRL2505PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 1
  • 1 $2.2300
  • 10 $2.1100
  • 50 $2.0000
  • 100 $1.8900
$1.8900 / $2.2300 Buy Now
Future Electronics Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 6200
Tube
  • 50 $1.1100
  • 200 $1.0600
  • 750 $1.0100
  • 1,250 $0.9900
  • 2,500 $0.9400
$0.9400 / $1.1100 Buy Now
Future Electronics Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 325
Tube
  • 1 $1.1800
  • 40 $1.1200
  • 150 $1.0700
  • 500 $1.0300
  • 2,000 $0.9400
$0.9400 / $1.1800 Buy Now
Rochester Electronics IRL2505 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 1250
  • 1 $1.2700
  • 25 $1.2400
  • 100 $1.1900
  • 500 $1.1400
  • 1,000 $1.0800
$1.0800 / $1.2700 Buy Now
DISTI # IRL2505PBF
TME Transistor: N-MOSFET, unipolar, 55V, 104A, 200W, TO220AB Min Qty: 1 281
  • 1 $2.0900
  • 10 $1.7800
  • 50 $1.5600
  • 100 $1.4700
  • 250 $1.3500
  • 500 $1.2700
  • 1,000 $1.1800
$1.1800 / $2.0900 Buy Now
Ameya Holding Limited   Min Qty: 50 615
  • 50 $2.2334
  • 100 $2.1776
  • 200 $2.1230
  • 500 $2.0699
$2.0699 / $2.2334 Buy Now
DISTI # SP001567114
EBV Elektronik Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB (Alt: SP001567114) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
LCSC 55V 104A 8m10V54A 200W 2V250uA 1PCSNChannel TO-220AB MOSFETs ROHS 274
  • 1 $1.8926
  • 10 $1.6383
  • 30 $1.4790
  • 100 $1.3168
  • 500 $1.2437
  • 1,000 $1.2116
$1.2116 / $1.8926 Buy Now
New Advantage Corporation Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 5200
  • 150 $1.3100
  • 5,200 $1.2300
$1.2300 / $1.3100 Buy Now

Part Details for IRL2505PBF

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IRL2505PBF Part Data Attributes:

Parametric Data
IRL2505PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRL2505PBF Infineon Technologies AG Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 104 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 360 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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